The present disclosure provides methods of making and applying metalized graphene fibers in bioelectronics applications. For example, platinized graphene fibers may be used as an implantable conductive suture for neural and neuro-muscular interfaces in chronic applications. In some embodiments, an implantable electrode includes a multi-layer graphene-fiber core, an insulative coating surrounding the multi-layer graphene-fiber core, and a metal layer disposed between the multi-layer graphene-fiber core and the insulative coating.

A substrate is coated with a multi-layer coating, comprising in order: (i) a first functional layer comprising ta-C, (ii) a second functional layer comprising ta-C, (iii) (a) a third functional layer comprising ta-C and a first intermediate layer comprising a carbide of a first element, or (b) a first intermediate layer comprising a carbide of a first element, and a second intermediate layer comprising the first element, wherein the ta-C has a hydrogen content less than 10% and an sp2 content less than 30%; wherein (i) the Young's modulus or (ii) the hardness or (iii) both the Young's modulus and the hardness independently stay the same or increase from layer to layer in (iii) (a) from the first intermediate layer to the first functional layer, or in (iii) (b) from the second intermediate layer to the first functional layer.

A Cu—Ga sputtering target made of a composition containing: as metal components excluding fluorine, 5 atomic % or more and 60 atomic % or less of Ga and 0.01 atomic % or more and 5 atomic % or less of K; and the Cu balance containing inevitable impurities is provided. In the Cu—Ga sputtering target, the Cu—Ga sputtering target has a region containing Cu, Ga, K, and F, in an atomic mapping image by a wavelength separation X-ray detector.

A cathodic arc evaporation apparatus including a target which has a target surface including an active surface from where material can be evaporated in a cathodic arc process; a confinement surrounding an outer boarder of the target surface; an anode having an electron receiving surface, the anode encompassing at least one of the target and the confinement in at least one of a target plane and an axial distance in front of the active surface; and a magnetic guidance system adapted to provide a magnetic field at the target surface being essentially in parallel to at least an outer region of the target surface so that magnetic field lines are in parallel to the target surface or inclined to it in an acute angle α, whereat an active surface is defined in a surface area where magnetic field lines enter the target surface in an acute angle α≤45°.

An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.

The invention relates to a method for coating a substrate 40, a coating system for carrying out the method, and a coated body. In a first method step 62, the substrate 40 is to pretreated in a ion etching process. In a second method step 64, a first coating layer 56a with a thickness of 0.1 μm to 6 μm is deposited on the substrate 40 by means of a PVD process. In order to achieve a particularly high-quality and durable coating 50, the surface of the first coating layer 56a is treated by means of an ion etching process in a third method step 66, and an additional coating layer 56b with a thickness of 0.1 μm to 6 μm is deposited on the first coating layer 56a by means of a PVD process in a fourth method step 68. The coated body comprises at least two coating layers 56a, 56b, 56c, 56d with a thickness of 0.1 μm to 6 μm on a substrate 40, wherein an interface region formed by ion etching is arranged between the coating layers 56a, 56b, 56c, 56d.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.

[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm.sup.2/Vs or more.

Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.

A surface treatment device includes a housing unit, a surface treatment element, and a stirring element. The housing unit houses a workpiece. The surface treatment element performs surface treatment on the workpiece housed in the housing unit. The stirring element stirs the workpiece when the surface treatment element performs the surface treatment on the workpiece.