A PVD chamber shield includes: a shield configured to surround a space between a sputtering target and a substrate that are disposed in a PVD chamber body, the shield having a hollow shape with an inner surface and an outer surface; and a coating layer formed over the inner surface of the shield. The coating layer has i) a dielectric constant not greater than a dielectric constant of a material deposited over the substrate, ii) a porosity greater than 0 vol % and less than 100 vol %, and iii) a thickness greater than 150 pm and less than a given upper limit, the upper limit being set to prevent an occurrence of peeling of a material deposited over the coating layer.

Evaporation source, in particular for use in a sputtering process or in a vacuum arc evaporation process, preferably a cathode vacuum arc evaporation process. The evaporation source includes an inner base body which is arranged in an outer carrier body and which is arranged with respect to the outer carrier body such that a cooling space in flow communication with an inlet and an outlet is formed between the base body and the carrier body. In accordance with the invention, the cooling space includes an inflow space and an outflow space, and the inflow space is in flow communication with the outflow space via an overflow connection for the cooling of the evaporation source such that a cooling fluid can be conveyed from the inlet via the inflow space the overflow connection and the outflow space to the outlet.

A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

A method for producing the metal cylinder material according to the present disclosure includes: a process A of forming a slitted cylinder-shaped body including at least one slit extending from one end face to the other end face of a cylinder barrel portion consisting of at least one metal plate material; a process B of forming a filler-equipped cylinder-shaped body including a filling portion obtained by filling the slit with a filler for the filler to be filled throughout the slit in a length direction of the slit; and a process C of, by inserting at least a probe of a friction stir rotation tool including the probe at least into the filling portion and executing FSP, reforming at least the filling portion of the filler-equipped cylinder-shaped body to obtain the metal cylinder material including an FSP portion.

A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low T.sub.g glass, a precursor of a low T.sub.g glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

A method for preparing a CeO.sub.x coating on a surface of a substrate includes depositing a CeO.sub.x coating on the surface by means of a reactive magnetron sputtering from a pure cerium target. The CeO.sub.x coating can be transparent for visible light. A method for reducing the adhesion of a tissue material such as from a human to a surface of a medical instrument, for reducing the water condensation and improving the heat transfer performance of a heat exchanger surface of a substrate, and for reducing corrosion of a surface of a substrate includes depositing a CeO.sub.x coating on the substrate by means of a reactive magnetron sputtering from a pure cerium target. This provides an environmentally friendly preparation of the CeO.sub.x coating with no need for organic solvents or volatile organic compounds. The CeO.sub.x coating has good hydrophobicity, enhanced hardness, exceptionally high wear resistance, and superior thermal stability.

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

In a plasma processing apparatus according to an exemplary embodiment, a gas supply system supplies a gas into a processing container. A plasma source excites the gas supplied by the gas supply system. A support structure holds a processing target within the processing container. The support structure is configured to rotatably and tiltably support the processing target. The plasma processing apparatus further includes a bias power supply unit that applies a pulse-modulated DC voltage, as a bias voltage for ion attraction, to the support structure.