A method for producing a thin film according to the present disclosure comprises a step of forming the thin film on a substrate using a target. The target is formed of a mixture containing a first material and a second material. The first material has a composition represented by ATiO.sub.3 (where A is at least one selected from the group consisting of Ba and Sr). The second material has a composition represented by EH.sub.2 (where E is at least one selected from the group consisting of Ti and Zr). The thin film is formed of a first oxide containing A, Ti, and O. Some of oxide ions contained in the first oxide have been replaced by hydride ions.

A method for producing a thin film according to the present disclosure comprises a step of forming the thin film on a substrate using a target. The target is formed of a mixture containing a first material and a second material. The first material has a composition represented by ATiO.sub.3 (where A is at least one selected from the group consisting of Ba and Sr). The second material has a composition represented by EH.sub.2 (where E is at least one selected from the group consisting of Ti and Zr). The thin film is formed of a first oxide containing A, Ti, and O. Some of oxide ions contained in the first oxide have been replaced by hydride ions.

A plasma processing system used for reactive sputtering may include multiple dual magnetron sputtering (DMS) components. Each DMS component may include a power supply coupled with two electrodes that switch between operation as a cathode and anode and are located within a plasma chamber. The power supply may be configured to operate as a transmitter or receiver power supply. A transmitter power supply may receive a phase-control-input signal that includes a phase offset value and may produce a phase-control-output signal and synchronization signal. The transmitter power supply may send the phase-control-output signal and synchronization signal to a receiver power supply, which may use these signals to synchronize electrode switching with the transmitter power supply and to apply the phase offset.

A processing chamber includes a ground shield and a cover ring. The ground shield includes an annular body, and at least one guide pin extending from the annular body. The cover ring is positioned on the ground shield, and includes an annular body including at least one recess. At least a part of the at least one guide pin is receivable in the at least one recess, an inner cylindrical ring extends from the annular body, and an outer cylindrical ring extends from the annular body and is radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body.

A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together from seeping to the outside. The backing plate has a projected portion which is projected outward beyond an outer peripheral end of the target, and an annular shield plate is disposed to lie opposite to the projected portion so as to enclose the target in a state in which the target assembly is assembled onto a sputtering apparatus (SM). That portion of the backing plate to which the target gets bonded is defined as a bonding portion, and this bonding portion is protruded relative to the projected portion.

The present invention provides a process for the removal of chromium contaminants on a spent ruthenium sputtering target used in Plasma Vapor Deposition by the steps of grit abrasion, organic solvent cleaning, and being subjected to an electric field in an acidic bath including a surfactant, and followed by subsequent water and air rinse and further grit abrasion. Removal of the contaminants is verified by spectroscopy.

A sputtering target comprising: a backing plate; and a target material bonded via a bonding material to a bonding region of the backing plate, wherein a bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and wherein a maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.6% or less of the area of the bonding region.

The sputtering target enables manufacturing of the sputtering target in which the target material is hardly peeled off during sputtering.

A PVD chamber shield includes: a shield configured to surround a space between a sputtering target and a substrate that are disposed in a PVD chamber body, the shield having a hollow shape with an inner surface and an outer surface; and a coating layer formed over the inner surface of the shield. The coating layer has i) a dielectric constant not greater than a dielectric constant of a material deposited over the substrate, ii) a porosity greater than 0 vol % and less than 100 vol %, and iii) a thickness greater than 150 pm and less than a given upper limit, the upper limit being set to prevent an occurrence of peeling of a material deposited over the coating layer.