Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

A high-purity copper sputtering target, wherein a Vickers hardness of a flange part of the target is in a range of 90 to 100 Hv, a Vickers hardness of an erosion part in the central area of the target is in a range of 55 to 70 Hv, and a crystal grain size of the erosion part is 80 μm or less. This invention relates to a high-purity copper sputtering target that does not need to be bonded to a backing plate (BP), and aims to provide a high-purity copper sputtering target capable of forming a thin film having superior uniformity by enhancing a strength (hardness) of the flange part of the target, and reducing an amount of warpage of the target. Moreover, the uniformity of the film thickness is improved by adjusting the (111) orientation ratio of the erosion part and the flange part in the target. The present invention thereby aims to provide a high-purity copper sputtering target, which is capable of improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration, and useful for forming a copper alloy wiring for semiconductors.

Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.

Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fe.sub.a—Co.sub.100-a).sub.100-b-c-d—Ta.sub.b—Nb.sub.c-M.sub.d, wherein 0<a≦80, 0≦b≦10, 0≦c≦15, 5≦b+c≦15, 2≦d≦20, 15≦b+c+d≦25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ε.sub.fB at 300° C. of 0.4% or more.

A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO.sub.3(ZnO).sub.m), where m≧2. The active layer fabricated with InGaO.sub.3(ZnO).sub.m has a good electron mobility, and the quality of the fabricated active layer is improved.

Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

An apparatus for coating at least a first plurality of articles each article thereof having at least a first surface to be coated is disclosed. The apparatus includes an emission source for directing emission elements towards the first surfaces of the plurality of articles, at least one support member for supporting the first plurality of articles, wherein support member supports the first plurality of articles such that the first surface is exposed to the path of emission from said emission source, and a drive assembly for moving the support member such that the first plurality of articles is moveable with respect to the path of emission from said emission source.

An apparatus for coating at least a first plurality of articles each article thereof having at least a first surface to be coated is disclosed. The apparatus includes an emission source for directing emission elements towards the first surfaces of the plurality of articles, at least one support member for supporting the first plurality of articles, wherein support member supports the first plurality of articles such that the first surface is exposed to the path of emission from said emission source, and a drive assembly for moving the support member such that the first plurality of articles is moveable with respect to the path of emission from said emission source.

A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.