Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

A material suitable for a semiconductor included in a transistor, a diode, or the like is provided. The material is an oxide material including In, M1, M2 and Zn, in which M1 is an element in the group 13 of the periodic table, a typical example thereof is Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. To contain M2 leads to suppression of generation of oxygen vacancies in the oxide material. A transistor which includes as few oxygen vacancies as possible can be achieved, whereby reliability of a semiconductor device can be increased.

Provided is an arc evaporation source equipped with a target, a ring-shaped magnetic field guide magnet and a back side magnetic field generation source. The magnetic field guide magnet is aligned in a direction perpendicular to the evaporation face of the target and has a polarity that is the magnetization direction facing forward or backward. The back side magnetic field generation source is disposed at the rear of the magnetic field guide magnet, which is at the side of the back side of the target, and forms magnetic force lines running in the direction of magnetization of the magnetic field guide magnet. The target is disposed such that the evaporation face is positioned in front of the magnetic field guide magnet.

A substrate carrier unit includes a substrate carrier and a phase transition material. The substrate carrier defines an isolated space therein. The phase transition material is filled into the isolated space of the substrate carrier and has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the substrate carrier as latent heat to change the phase from solid to liquid.

A plasmonic scattering nanomaterial comprising a substrate layer, a metal oxide layer in continuous contact with the substrate layer and silver nanoparticles with a diameter of 25-300 nm deposited on the metal oxide layer is disclosed. The silver nanoparticles have a broad size distribution and interparticle distances such that the silver nanoparticles plasmonically scatter light throughout the metal oxide layer with a near electric field strength of 1-30 V/m when excited by a light source having a wavelength in the range of 300-500 nm and/or 1000-1200 nm. In addition, a method for producing the nanomaterial by sputter deposition is disclosed as well as an appropriate thin film plasmonic solar cell comprising the nanomaterial with a solar efficiency of at least 10%.

A cathode assembly for a magnetron sputtering system includes a target comprising sputterable material having an at least partially exposed, substantially planar sputtering or erosion surface and a target support configured to support and move the target during sputtering. In certain exemplary embodiments the cathode assembly further comprises a magnetic field source, e.g., a magnet array behind the target. The target support is configured to move the sputtering surface of the target by rotating or spinning the target in the plane of the sputtering surface, moving the target linearly back-and-forth or otherwise. The target support is configured to move the target relative to the magnetic field source, which may be stationary during sputtering, e.g., relative to the cathode assembly and vacuum chamber in which the sputtering is performed. A sputtering system including such a cathode assembly also is provided. A method of sputtering is further provided, employing such a cathode assembly.

A window film is disclosed. The window film includes: a flexible transparent base material; a first metal target material film, disposed on the surface of the flexible transparent base material; a first high refractive index compound film, disposed on the surface of the first metal target material film; a first metal oxide film, disposed on the surface of the first high refractive index compound film; a first silver-containing metal film, disposed on the surface of the first metal oxide film; a second metal target material film, disposed on the surface of the first silver-containing metal film; and a second high refractive index compound film, disposed on the surface of the second metal target material film. The window film has better adherence, and is less likely to peel off. In addition, the window film also has better oxidation resistance, and is less likely to be oxidized. Furthermore, the window film also has a better optical effect and heat insulation effect.

The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

The invention provides a quantum dot color film substrate, manufacturing method thereof and an LCD apparatus. The manufacturing method comprises forming an organic transparent photo-resist layer on transparent sub-pixel areas of a transparent substrate; forming a red quantum dot layer, a green quantum dot layer on corresponding red sub-pixel areas and green sub-pixel areas respectively by a sputter printing process using the organic transparent layer as stop walls to improve printing precision. The manufacturing method is simple, and requires less time and facility cost.