The present invention relates to a manufacturing apparatus and a manufacturing method for microwave means. The manufacturing apparatus (1) for microwave means comprises: a fixture (10, 10′), the fixture (10, 10′) comprising a base (11) capable of rotating about a first axis (A1), and a carrier (12) capable of swinging about a second axis (A2), the carrier (12) being connected to the base (11) so as to hold an insulating substrate (40), wherein the first axis (A1) intersects the second axis (A2); a source (20) for releasing metal ions towards the insulating substrate (40); and a controller (30), the controller (30) coupled to the fixture (10, 10′) and the source (20) and configured to control a movement pattern of the fixture (10, 10′) and/or an angle of the source (20) such that the insulating substrate (40) receives the metal ions from a plurality of angles and a metal layer (50) is formed over all surfaces (41) of the insulating substrate (40).

A film for inorganic substance deposition, comprising single or multiple resin layers, wherein all of the resin layers contain an ethylene-based polymer (A) having a melt tension (MT), as measured at 190° C., of not more than 5.0 g, and the film satisfies the following requirements: Requirement (1): the amount of a component generated by heating the film under the prescribed conditions is not more than 1.2 μg per milligram of the film; Requirement (2): the amount of a compound containing pentavalent phosphorus, said compound being recovered after washing of a surface of the film under the prescribed conditions, is not more than 9 μg; and Requirement (3): the amount of an oxide of an oligomer of a hexamer to a decamer, said oxide being recovered after washing of a surface of the film under the prescribed conditions, is not more than 1.5 μg.

A film for inorganic substance deposition, comprising single or multiple resin layers, wherein all of the resin layers contain an ethylene-based polymer (A) having a melt tension (MT), as measured at 190° C., of not more than 5.0 g, and the film satisfies the following requirements: Requirement (1): the amount of a component generated by heating the film under the prescribed conditions is not more than 1.2 μg per milligram of the film; Requirement (2): the amount of a compound containing pentavalent phosphorus, said compound being recovered after washing of a surface of the film under the prescribed conditions, is not more than 9 μg; and Requirement (3): the amount of an oxide of an oligomer of a hexamer to a decamer, said oxide being recovered after washing of a surface of the film under the prescribed conditions, is not more than 1.5 μg.

The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.

The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.

The present invention relates to an inorganic paint composition, and a method for forming an inorganic paint film by using the same. The inorganic paint composition comprises: at least one alkali metal silicates represented by the following chemical formulas 1-3; phosphoric acid (H.sub.3PO.sub.4); one or more strong bases selected from KOH, NaOH and LiOH; and water (H.sub.2O) (In chemical formulas 1-3, x and y are 0.01-500, and n is a natural number of 1-20). [Chemical formula 1] xNa.sub.2O.ySiO.sub.2.nH.sub.2O, [Chemical formula 2] xK.sub.2O.ySiO.sub.2.nH.sub.2O, and [Chemical formula 3] xLi.sub.2O.ySiO.sub.2.nH.sub.2O. An inorganic coating film formed using the inorganic paint composition of the present invention has a strong binding force, regardless of the kinds of base materials, and thus shows excellent adhesion, adherence and the like to the base material and is not separated from the base material even after a long time.

The present invention relates to an inorganic paint composition, and a method for forming an inorganic paint film by using the same. The inorganic paint composition comprises: at least one alkali metal silicates represented by the following chemical formulas 1-3; phosphoric acid (H.sub.3PO.sub.4); one or more strong bases selected from KOH, NaOH and LiOH; and water (H.sub.2O) (In chemical formulas 1-3, x and y are 0.01-500, and n is a natural number of 1-20). [Chemical formula 1] xNa.sub.2O.ySiO.sub.2.nH.sub.2O, [Chemical formula 2] xK.sub.2O.ySiO.sub.2.nH.sub.2O, and [Chemical formula 3] xLi.sub.2O.ySiO.sub.2.nH.sub.2O. An inorganic coating film formed using the inorganic paint composition of the present invention has a strong binding force, regardless of the kinds of base materials, and thus shows excellent adhesion, adherence and the like to the base material and is not separated from the base material even after a long time.

An active substrate alignment system for an ion implanter, the system including a platen, a registration device adapted to selectively move a substrate engagement surface disposed adjacent the platen for limiting movement of a substrate disposed on the platen, a camera configured to capture an image of the substrate before the substrate is disposed on the platen, and a controller in communication with the camera and the registration device, the controller configured to command the registration device to move the substrate engagement surface based on the image to limit movement of the substrate in a predetermined manner.

An active substrate alignment system for an ion implanter, the system including a platen, a registration device adapted to selectively move a substrate engagement surface disposed adjacent the platen for limiting movement of a substrate disposed on the platen, a camera configured to capture an image of the substrate before the substrate is disposed on the platen, and a controller in communication with the camera and the registration device, the controller configured to command the registration device to move the substrate engagement surface based on the image to limit movement of the substrate in a predetermined manner.

A gas generation system for an ion implantation system has a hydrogen generator configured to generate hydrogen gas within an enclosure. A chuck, such as an electrostatic chuck, supports a workpiece in an end station of the ion implantation system, and a delivery system provides the hydrogen gas to the chuck. The hydrogen gas can be provided through the chuck to a backside of the workpiece. Sensors can detect a presence of the hydrogen gas within the enclosure. A controller can control the hydrogen generator. An exhaust system can pass air through the enclosure to prevent a build-up of the hydrogen gas within the enclosure. A purge gas system provides a dilutant gas to the enclosure. An interlock system can control the hydrogen generator, delivery system, purge gas system, and exhaust system to mitigate hydrogen release based on a signal from the one or more sensors.