The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

A plasma source ion implanter with a preparation chamber for linear or cross transferring workpiece is provided to solve the problem of low production efficiency of an existing single vacuum chamber plasma source ion implanter. The ion implanter includes a preparation chamber, an implantation chamber and a workpiece transferring chamber. The implantation chamber is provided to maintain a high vacuum condition all the time, and the time for pre-vacuuming the base vacuum is ignored. The ion implanter with dual chamber configuration is able to greatly shorten the production cycle. The structural configurations of the preparation chamber and the implantation chamber are basically the same, and are adapted to be used independently when ion implantation is required for a long time.

A plasma source ion implanter with a preparation chamber for linear or cross transferring workpiece is provided to solve the problem of low production efficiency of an existing single vacuum chamber plasma source ion implanter. The ion implanter includes a preparation chamber, an implantation chamber and a workpiece transferring chamber. The implantation chamber is provided to maintain a high vacuum condition all the time, and the time for pre-vacuuming the base vacuum is ignored. The ion implanter with dual chamber configuration is able to greatly shorten the production cycle. The structural configurations of the preparation chamber and the implantation chamber are basically the same, and are adapted to be used independently when ion implantation is required for a long time.

An air gap forming method of forming an air gap in a gap structure having an upper surface, a lower surface, and a sidewall connecting the upper and lower surface, includes: repeatedly performing a selective deposition cycle, wherein the selective deposition cycle includes supplying a deposition inhibitor onto a substrate including the gap structure; and selectively forming a material layer on the upper surface compared to the sidewall.

An air gap forming method of forming an air gap in a gap structure having an upper surface, a lower surface, and a sidewall connecting the upper and lower surface, includes: repeatedly performing a selective deposition cycle, wherein the selective deposition cycle includes supplying a deposition inhibitor onto a substrate including the gap structure; and selectively forming a material layer on the upper surface compared to the sidewall.

Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

Fabricating a doped bismuth vanadate electrode includes spray coating a substrate with an aqueous solution with vanadium-containing anions and bismuth-containing cations to yield a coated substrate, heating the coated substrate to form crystalline bismuth vanadate on the substrate, and doping the crystalline bismuth vanadate with lithium ions to yield a doped bismuth vanadate electrode.