A vacuum deposition system includes a vacuum deposition chamber having multiple regions defined therein; a carousel disposed in the vacuum deposition chamber, the carousel configured to hold multiple substrates, the carousel rotatable around a central spindle; a deposition source positioned to deposit material onto a substrate located in a deposition region of the vacuum deposition chamber; and multiple heating elements disposed in the vacuum deposition chamber in a fixed position relative to the central spindle, each heating element being controllable separately from each other heating element, wherein each heating element is positioned to apply heat to a corresponding region of the vacuum deposition chamber.

A deposition apparatus includes a dome rotatable around the central axis; a loop chain surrounding the central axis on the dome; a power transmission shaft transmitting rotational motion of the dome; a first gear section transforming the rotational motion of the dome to rotational motion of the shaft; a second gear section provided with a chain-driving sprocket and configured to transform the rotational motion of the shaft to rotational motion of the sprocket; and a tray holder located beside the loop chain, the tray holder including a first internal power transmission shaft and a rotating portion holding a tray. The sprocket is rotated through the rotation of the dome to drive the loop chain, the first internal power transmission shaft of the tray holder is rotated by motion of the loop chain, and the rotating portion is rotated through rotation of the first internal power transmission shaft.

A deposition apparatus includes a dome rotatable around the central axis; a loop chain surrounding the central axis on the dome; a power transmission shaft transmitting rotational motion of the dome; a first gear section transforming the rotational motion of the dome to rotational motion of the shaft; a second gear section provided with a chain-driving sprocket and configured to transform the rotational motion of the shaft to rotational motion of the sprocket; and a tray holder located beside the loop chain, the tray holder including a first internal power transmission shaft and a rotating portion holding a tray. The sprocket is rotated through the rotation of the dome to drive the loop chain, the first internal power transmission shaft of the tray holder is rotated by motion of the loop chain, and the rotating portion is rotated through rotation of the first internal power transmission shaft.

A method for changing test substrates in a continuous-flow vacuum system in a multiple-treatment-step process cycle for treating a substrate, a treatment method using the method for changing test substrates, and systems for treating a plurality of substrates (61) and for changing test substrates. For at least two treatment steps, at least two test substrates (66) are transferred to a vacuum treatment system at the beginning of the process cycle and are transferred back out once the process cycle is concluded. Subsequently, the first test substrate (66) concurrently treated in this step is removed from the measurement position (70) it occupied during the treatment and is deposited in an empty position (71) without a test substrate (66). Subsequently, the second test substrate (66) which has not been treated yet is deposited in the resulting free measurement position (70) for the purpose of supplying the second test substrate to the subsequent treatment step.

Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate.

Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate.

A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

A cutting tool comprising a base material and a coating, wherein the coating includes a first layer having a multilayer structure in which a first unit layer and a second unit layer are alternately stacked; a thickness of the first unit layer is 2 to 50 nm; a thickness of the second unit layer is 2 to 50 nm; a thickness of the first layer is 1.0 ?m or more and 20 ?m or less, the first unit layer is composed of Ti.sub.aAl.sub.bB.sub.cN, and the second unit layer is composed of Ti.sub.dAl.sub.eB.sub.fN, wherein 0.49?a?0.70, 0.19?b?0.40, 0.10?c?0.20, a+b+c=1.00, 0.39?d?0.60, 0.29?e?0.50, 0.10<f?0.20, d+e+f=1.00, 0.05?a-d?0.20, and 0.05?e-b?0.20 are satisfied, and a percentage of the number of atoms of titanium to the total number of atoms of titanium, aluminum and boron is 45% or more in the first layer.

A module of a processing system for flipping a substrate in vacuum includes a clamp assembly for securing the substrate, a first motor assembly coupled to the clamp assembly for rotating the clamp assembly, and a second motor assembly coupled to the first motor assembly for raising and lowering the first motor assembly and the clamp assembly.