A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0 at all times.

A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0 at all times.

A method of scanning a wafer includes placing the wafer over a substrate holder inside a processing chamber, where the wafer is placed at a first twist angle relative to a reference axis of a rotatable feedthrough of the processing chamber. The method further includes performing a first pass scan by exposing the wafer to an ion beam while driving two rotary drives disposed in a scanning chamber synchronously to generate a planar motion of the wafer from a rotational motion of the two rotary drives, where the wafer is oriented continuously at the first twist angle when performing the first pass scan.

A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

A substrate support unit including a turntable which is rotatable around a first axis and which is driven by a first drive. A plurality of substrate carrier units are arranged concentric to the first axis on the turntable. Each of the plurality of substrate carrier units includes a substrate carrier which is rotatable around a corresponding second axis and which is driven by a second drive, wherein all second axes are parallel to the first axis.

A surface treatment apparatus includes a mounting device, a housing unit, a surface treatment device, a conveyance device, and a first adjustment device. A workpiece is mounted on the mounting device. The housing unit houses the workpiece mounted on the mounting device. The surface treatment device performs at least one kind of surface treatment on the workpiece housed in the housing unit. The conveyance device conveys the workpiece mounted on the mounting device along the surface treatment device. The first adjustment device adjusts an orientation of the workpiece according to a conveyance position by the conveyance device and a position of the surface treatment device.

A deposition apparatus for depositing a deposition material on a base substrate disposed on a mask, includes: a mask assembly including a mask frame which defines an opening therein and surrounds the opening, and the mask disposed on the mask frame; an electrostatic chuck disposed on the base substrate; and a plate disposed on the electrostatic chuck. The electrostatic chuck includes a plurality of magnetic bodies, and a magnetic property of at least one magnetic body among the plurality of magnetic bodies is different from a magnetic property of remaining magnetic bodies except for the at least one magnetic body among the plurality of magnetic bodies.

A deposition apparatus for depositing a deposition material on a base substrate disposed on a mask, includes: a mask assembly including a mask frame which defines an opening therein and surrounds the opening, and the mask disposed on the mask frame; an electrostatic chuck disposed on the base substrate; and a plate disposed on the electrostatic chuck. The electrostatic chuck includes a plurality of magnetic bodies, and a magnetic property of at least one magnetic body among the plurality of magnetic bodies is different from a magnetic property of remaining magnetic bodies except for the at least one magnetic body among the plurality of magnetic bodies.

A film deposition apparatus includes a vacuum chamber, a rotary table in the vacuum chamber, and configured to mount multiple substrates along a circumferential direction, a first processing region, a separation region, and a second processing region provided in this order from an upstream side to a downstream side in a rotation direction of the rotary table. A separation gas supply and a third exhaust port are provided in the separation region. The separation gas supply supplies a separation gas to separate a first process gas supplied to the first processing region and a second process gas supplied to the second processing region. The third exhaust port exhausts the separation gas supplied to the separation region. The separation gas supply includes first and second discharge ports provided such that the third exhaust port is between the first and second discharge ports in the circumferential direction of the rotary table.