In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

An apparatus to coat at least one three-dimensional (3D) object. The apparatus includes: a coating chamber; a vacuum pump system; a chamber port; and a rotatable object holder. The holder has a rotational axis Z. At least two rotary cathodes are positioned in the chamber. Each cathode includes a hollow cylindrical rotary target having a rotary axis Y. A magnetic system is swivel or rotary mounted round axis Y and positioned neighboring to an inner diameter surface of the target. At least one power supply is provided for the target. The targets of the at least two rotary cathodes are positioned round the holder, with their axes Y1, Y2 transverse to axis Z, both being offset to the holder in a z-direction, and being offset to each other in a direction along axis Z on opposite sides of an object plane O which is vertical to axis Z.

An assembly for a fuel injector includes a base material, a coated region formed on a surface of the base material, an uncoated region formed on a surface of the base material, in contact with and supported by a jig, and formed to be partitioned from the coated region so as to prevent the coated region from peeling off during laser welding, and a coating material stacked in a multilayer structure on the coated region. As a result, friction reduction, high hardness, impact resistance, heat resistance, and durability of the assembly may be improved, and a portion requiring the coating may be precisely coated.

A method of conditioning a coater for removing water and/or moisture from a processing area of the coater is provided, the processing area comprising at least one pump compartment and at least one sputtering compartment. The method comprises the steps of loading conditioning substrates into the processing area, so that the processing area is substantially filled with the conditioning substrates and conditioning the coater by starting a sputtering process in the processing area and/or by heating of at least the one pump compartment. During conditioning, the conditioning substrates perform an oscillating movement in the processing area.

A method of conditioning a coater for removing water and/or moisture from a processing area of the coater is provided, the processing area comprising at least one pump compartment and at least one sputtering compartment. The method comprises the steps of loading conditioning substrates into the processing area, so that the processing area is substantially filled with the conditioning substrates and conditioning the coater by starting a sputtering process in the processing area and/or by heating of at least the one pump compartment. During conditioning, the conditioning substrates perform an oscillating movement in the processing area.

An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.