The present disclosure provides a clamp and a carrier used in a coating apparatus. The clamp includes a fixed clamping piece and a movable clamping piece connected to the fixed clamping piece through a torsion spring. A guide groove in which a clamping backing plate is slidably mounted is provided on the movable clamping piece. A transmission mechanism is disposed on the movable clamping piece and is connected to the clamping backing plate. When a force is applied to the transmission mechanism to open the movable clamping piece, the transmission mechanism drives the clamping backing plate to retract into the guide groove, and when the force applied to the transmission mechanism is withdrawn, the movable clamping piece is closed under the action of the torsion spring such that the transmission mechanism drives the clamping backing plate to extend out of the guide groove and beyond the movable clamping piece.

The present disclosure provides a clamp and a carrier used in a coating apparatus. The clamp includes a fixed clamping piece and a movable clamping piece connected to the fixed clamping piece through a torsion spring. A guide groove in which a clamping backing plate is slidably mounted is provided on the movable clamping piece. A transmission mechanism is disposed on the movable clamping piece and is connected to the clamping backing plate. When a force is applied to the transmission mechanism to open the movable clamping piece, the transmission mechanism drives the clamping backing plate to retract into the guide groove, and when the force applied to the transmission mechanism is withdrawn, the movable clamping piece is closed under the action of the torsion spring such that the transmission mechanism drives the clamping backing plate to extend out of the guide groove and beyond the movable clamping piece.

A plate-like base of a substrate holder has an upper surface perpendicular to a central axis. A supporter is disposed circumferentially around the central part of the base and protrudes upward from the upper surface of the base to support the lower surface of a substrate. A flexible seal is disposed around the entire periphery of the supporter. An upper edge portion of the seal is located above the supporter. When the substrate holder adsorbs a substrate, gas present between the base and the substrate is sucked through a suction port with the upper edge portion of the seal being in contact with the lower surface of the substrate. This allows the substrate to approach the base and come in contact with the supporter while making the seal bend down. As a result, even if there is a warp in a substrate, the substrate can be held suitably.

According to one embodiment, a film formation apparatus includes a substrate support member, a first gas supplier disposed above the substrate support member and supplying a first gas, a second gas supplier disposed between the substrate support member and the first gas supplier and supplying a second gas, and a plate member disposed between the first gas supplier and the second gas supplier and having a hole, the plate member defining a plasma generation area between the first gas supplier and the plate member, the plasma generation area generating plasma of the first gas, wherein the hole has a diameter between 0.1 to 2 mm and a depth between 0.1 to 5 mm.

In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

An electrostatic chuck and a substrate processing apparatus including the same are disclosed. In one aspect, the electrostatic chuck includes a stage configured to support a substrate including a panel formation region and a dummy region surrounding the panel formation region. The electrostatic chuck includes a substrate fixing unit including a plurality of electrode patterns insulated from the substrate and spaced apart from one another, the substrate fixing unit at least partially overlapping the dummy region of the substrate and not overlapping the panel formation region of the substrate.

An electrostatic chuck and a substrate processing apparatus including the same are disclosed. In one aspect, the electrostatic chuck includes a stage configured to support a substrate including a panel formation region and a dummy region surrounding the panel formation region. The electrostatic chuck includes a substrate fixing unit including a plurality of electrode patterns insulated from the substrate and spaced apart from one another, the substrate fixing unit at least partially overlapping the dummy region of the substrate and not overlapping the panel formation region of the substrate.

A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.

A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.