A method for depositing a layer (2) of a coating which is reflective or anti-reflective to DUV radiation onto a surface (3a) of a substrate (3) for a DUV optical element includes: transferring a coating material (M) into the gas phase in a coating source (4), moving the substrate relative to the coating source along a predetermined movement path (5), and varying a coating rate (RB) and/or a rotation speed (?(t)) of a spin axis (7) of the substrate during the movement along the movement path. A covering element (6) is arranged between the coating source (4) and the surface and covers the surface at least partially during the movement of the substrate. Also disclosed is an optical element for the DUV wavelength range, with a substrate and a reflective or anti-reflective coating (B) applied to the substrate, having at least one layer deposited by the disclosed method.

A physical vapor deposition (PVD) chamber deposits thin films on substrates having through-vias (TVs) formed therethrough in an electronic device fabrication process. More particularly, apparatus and methods improve film deposition uniformity when the TVs have a high aspect ratio or are otherwise shaped in a manner that can decrease the deposition of sputtered material. A sacrificial plate is used below the substrate in a manner whereby material is sputtered into the TVs from below in addition to the conventional top-down sputtering.

A physical vapor deposition (PVD) chamber deposits thin films on substrates having through-vias (TVs) formed therethrough in an electronic device fabrication process. More particularly, apparatus and methods improve film deposition uniformity when the TVs have a high aspect ratio or are otherwise shaped in a manner that can decrease the deposition of sputtered material. A sacrificial plate is used below the substrate in a manner whereby material is sputtered into the TVs from below in addition to the conventional top-down sputtering.

A coating system for coating a strip, for example a steel strip, with a material present in the gas phase includes a coating chamber, a device for vapor deposition of the material, and a strip positioning assembly for correcting the strip transport. The strip positioning assembly has a first guide roller and a second guide roller pivoting about a pivot point, which can be effected with an adjustment unit. A method for coating a strip is also provided.

A coating system for coating a strip, for example a steel strip, with a material present in the gas phase includes a coating chamber, a device for vapor deposition of the material, and a strip positioning assembly for correcting the strip transport. The strip positioning assembly has a first guide roller and a second guide roller pivoting about a pivot point, which can be effected with an adjustment unit. A method for coating a strip is also provided.

Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

Systems and methods for depositing materials on a substrate via OVJP are provided. A float table and grippers are used to move and position the substrate relative to one or more OVJP print bars to reduce the chance of damaging or compromising the substrate or prior depositions.

Systems and methods for depositing materials on a substrate via OVJP are provided. A float table and grippers are used to move and position the substrate relative to one or more OVJP print bars to reduce the chance of damaging or compromising the substrate or prior depositions.

A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) arranged to accommodate the inner container (30) therein; an outer container (60) arranged to accommodate the insulation container (50) and the inner container (30) therein; and heating means (70) arranged outside the outer container (60) and configured to heat the cavity (5), wherein the inner container (30) comprises a support structure for supporting a solid monolithic source material (10) at a predetermined distance above the substrate (20) in the cavity (5) such that a growth surface of the substrate (20) is entirely exposed to the source material (10). A corresponding method is also disclosed.