Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

A method for adjusting a contact position of lift pins in a substrate placement mechanism is provided. The substrate placement mechanism includes a substrate placement table and a substrate lifting mechanism having lift pins and a driving mechanism, wherein the contact position of the lift pins is a height position where tip ends of the lift pins get in contact with the substrate. The method comprises creating torque waveforms, for a plurality of voltages, indicating temporal changes of a torque of the motor while moving the tip ends of the lift; obtaining from the plurality of torque waveforms a contact point when the lift pins get in contact with the substrate and calculating the contact position from the contact point and a speed of the motor; determining whether the contact position is within an appropriate range; and automatically adjusting the contact position when the contact position is not within the appropriate range.

A method for adjusting a contact position of lift pins in a substrate placement mechanism is provided. The substrate placement mechanism includes a substrate placement table and a substrate lifting mechanism having lift pins and a driving mechanism, wherein the contact position of the lift pins is a height position where tip ends of the lift pins get in contact with the substrate. The method comprises creating torque waveforms, for a plurality of voltages, indicating temporal changes of a torque of the motor while moving the tip ends of the lift; obtaining from the plurality of torque waveforms a contact point when the lift pins get in contact with the substrate and calculating the contact position from the contact point and a speed of the motor; determining whether the contact position is within an appropriate range; and automatically adjusting the contact position when the contact position is not within the appropriate range.

A stage 1 that is installed in a chamber and that is for heating and cooling an object, the stage includes: a stage body 5 having a mount surface on which the object is to be mounted; a first pipe-shaped part 7 for causing a first fluid for adjusting the temperature of the mount surface to flow therein; and a first pipe-supporting part 9 for supporting the first pipe-shaped part 7. The stage body 5 has a first groove part 11 for housing the first pipe-shaped part 7, and a pair of cutouts 13a and 13b that oppose each other with the first groove part 11 therebetween. The first pipe-supporting part 9 has a linking section 15 that links the pair of cutouts 13a and 13b together.

According to one embodiment, a manufacturing device of a display device includes first, second, third and fourth evaporation portions. A conveyance mechanism includes a first rail provided along the first evaporation portion, a second rail provided along the second evaporation portion, a third rail provided along the third evaporation portion, a fourth rail provided along the fourth evaporation portion, a first rotation chamber provided between the first rail and the second rail and between the third rail and the fourth rail and rotating the processing substrate which passed through the first rail and conveying the processing substrate to the fourth rail, and a gate valve provided between the first rotation chamber and the third and fourth rails.

[Object] To provide an electrostatic chuck that stably supports a substrate while suppressing a rapid increase in the volume of a gas, a vacuum processing apparatus, and a substrate processing method. [Solving Means] An electrostatic chuck according to an embodiment of the present invention includes: a chuck plate that has a first surface supporting a substrate and a second surface opposite to the first surface. The chuck plate includes an exhaust passage that exhausts a gas from between the substrate and the first surface, the gas being emitted from the substrate between the substrate and the first surface when the substrate is supported by the first surface.

[Object] To provide an electrostatic chuck that stably supports a substrate while suppressing a rapid increase in the volume of a gas, a vacuum processing apparatus, and a substrate processing method. [Solving Means] An electrostatic chuck according to an embodiment of the present invention includes: a chuck plate that has a first surface supporting a substrate and a second surface opposite to the first surface. The chuck plate includes an exhaust passage that exhausts a gas from between the substrate and the first surface, the gas being emitted from the substrate between the substrate and the first surface when the substrate is supported by the first surface.

A temperature-controlled substrate support for a substrate processing system includes a substrate support and a controller. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one, and a temperature sensor located in one of the N zones. The controller is configured to calculate N resistances of the N resistive heaters during operation and adjust power to N-1 of the N resistive heaters during operation of the substrate processing system in response to a temperature measured by the temperature sensor located in the one of the N zones and the N resistances of the N resistive heaters.

A plasma chamber for physical vapor deposition, having an anode aperture shield that reduces the field of view to the substrate for deposition particles from the sputtering target. The anode aperture shield limits the deposition particles reaching the substrate to selected maximum angles from the vertical, and rejects particles approaching with a larger angle from the vertical. The node aperture shield is grounded and may be constructed of an upper plate and a lower plate spaced apart from the upper plate, wherein the upper plate may include perforations or may incorporate an electron filter.

A plasma chamber for physical vapor deposition, having an anode aperture shield that reduces the field of view to the substrate for deposition particles from the sputtering target. The anode aperture shield limits the deposition particles reaching the substrate to selected maximum angles from the vertical, and rejects particles approaching with a larger angle from the vertical. The node aperture shield is grounded and may be constructed of an upper plate and a lower plate spaced apart from the upper plate, wherein the upper plate may include perforations or may incorporate an electron filter.