To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber. The vacuum treatment chamber is split in a workpiece treatment compartment and in a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows providing a pumping port of a flow cross-section area freely selectable independently from the geometry of the treatment compartment.

A pulsed laser deposition system comprising a split ablation target having a first half and a second half, wherein the target contains a film material for deposition on a substrate, and wherein the film material is comprised of a plurality of component elements, the elements varying in volatility, and wherein one half of the split ablation target contains more of the most volatile elements being deposited than the other half, and wherein the split ablation target is rotated about its center. A laser beam is rastered back and forth across the target such that the laser spends more time on one half of the split target than the other half depending on the elemental volatility. The target rotation and laser beam rastering are coordinated simultaneously to vary the elemental composition of the resulting film deposition.

A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.

A chucking apparatus and methods for coating a glass substrate using a vacuum deposition process are disclosed. In one or more embodiments, the chucking apparatus includes an ESC (ESC), a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface. In one or more embodiments, the method includes disposing a carrier and a glass substrate on an ESC, such that the carrier is between the glass substrate and the ESC to form a chucking assembly, forming a Van der Waals bond between the carrier and the glass substrate, and vacuum depositing a coating on the glass substrate.

A chucking apparatus and methods for coating a glass substrate using a vacuum deposition process are disclosed. In one or more embodiments, the chucking apparatus includes an ESC (ESC), a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface. In one or more embodiments, the method includes disposing a carrier and a glass substrate on an ESC, such that the carrier is between the glass substrate and the ESC to form a chucking assembly, forming a Van der Waals bond between the carrier and the glass substrate, and vacuum depositing a coating on the glass substrate.

The present invention aims at improving and upgrading the conventional devices based on the low temperature magnetron sputtering coating devices. Starting from the material systems, the invention provides a new material system and a manufacturing method thereof based on a high molecular weight polyethylene joint cup to solve the poor binding force problem between the film and the matrix, and the problems of easy oxidization and carbonization of high molecular weight polyethylene with low temperature magnetron sputtering technologies at the same time. On the above basis, the ultra-lubrication performance of graphite-like structure films and ultra-hardness of diamond-like structure films are utilized to construct a nano-scale multilayer structure DLC film alternatively coated with a graphite-like film and a diamond-like film. The present invention improves the wear resistance of high molecular weight polyethylene joint cups, and restricts low accuracy of joints due to creeping by constructing a new artificial hip joint cup of ultra-wear-resisting nano-scale multilayer structure DLC film with high hardness and self-lubricating capability.

A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

Apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal rotates with a workpiece on it. The PVD chamber includes a lid assembly includes a first target and a second target of a same target material, where a first surface of the first target defines a first zone of the processing region a first distance from the upper surface of the pedestal, and a second surface of the second target defines a second zone of the processing region a second distance from the plane of the upper surface of the pedestal. A system controller is configured to simultaneously control a first voltage bias for the first target and a second voltage bias for the second target.