Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.

Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.

Embodiments of a process kit are provided herein. In some embodiments, a deposition ring includes: an annular band having an upper surface and a lower surface, wherein the annular band includes a radially inner portion and a radially outer portion, wherein the lower surface includes a step that extends downward from the radially inner portion to the radially outer portion, wherein the step is disposed closer to a radially outermost surface of the annular band than a radially innermost surface of the annular band; an inner lip extending upwards from the upper surface of the annular band, and wherein the upper surface of the inner lip is an uppermost surface of the deposition ring; a channel disposed radially outward of and beneath a lowermost surface of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Embodiments of a process kit are provided herein. In some embodiments, a deposition ring includes: an annular band having an upper surface and a lower surface, wherein the annular band includes a radially inner portion and a radially outer portion, wherein the lower surface includes a step that extends downward from the radially inner portion to the radially outer portion, wherein the step is disposed closer to a radially outermost surface of the annular band than a radially innermost surface of the annular band; an inner lip extending upwards from the upper surface of the annular band, and wherein the upper surface of the inner lip is an uppermost surface of the deposition ring; a channel disposed radially outward of and beneath a lowermost surface of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

There is provided a ceramic susceptor where a conduction failure due to defective connection of inner electrodes is unlikely to occur. The ceramic susceptor includes a ceramic susceptor main body including a first surface for a wafer to be placed thereon, and a second surface opposite the first surface; an inner electrode that is embedded in the ceramic susceptor main body; and a terminal having one end connected to the inner electrode and another end reaching the second surface of the ceramic susceptor main body. The inner electrode includes a horizontal portion provided in parallel with the first surface, and a non-horizontal portion extending from the horizontal portion toward the first surface or the second surface. The horizontal portion and the non-horizontal portion are integrally formed by bending one electrode such that a bent portion that forms a boundary between the horizontal portion and the non-horizontal portion is present.

There is provided a ceramic susceptor where a conduction failure due to defective connection of inner electrodes is unlikely to occur. The ceramic susceptor includes a ceramic susceptor main body including a first surface for a wafer to be placed thereon, and a second surface opposite the first surface; an inner electrode that is embedded in the ceramic susceptor main body; and a terminal having one end connected to the inner electrode and another end reaching the second surface of the ceramic susceptor main body. The inner electrode includes a horizontal portion provided in parallel with the first surface, and a non-horizontal portion extending from the horizontal portion toward the first surface or the second surface. The horizontal portion and the non-horizontal portion are integrally formed by bending one electrode such that a bent portion that forms a boundary between the horizontal portion and the non-horizontal portion is present.

A physical vapor deposition (PVD) system includes: a pedestal configured to accommodate a semiconductor wafer; a cover plate above the pedestal configured to hold a target; and a collimator disposed above the pedestal and below the cover plate. The collimator has an upper surface and a lower surface. The lower surface is flat, and the upper surface is non-flat. A first thickness, in a vertical direction, of the collimator at a central portion is smaller than a second thickness, in the vertical direction, of the collimator at a peripheral portion.

A physical vapor deposition (PVD) system includes: a pedestal configured to accommodate a semiconductor wafer; a cover plate above the pedestal configured to hold a target; and a collimator disposed above the pedestal and below the cover plate. The collimator has an upper surface and a lower surface. The lower surface is flat, and the upper surface is non-flat. A first thickness, in a vertical direction, of the collimator at a central portion is smaller than a second thickness, in the vertical direction, of the collimator at a peripheral portion.

Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.

Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.