A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.

A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a chamber, a film formation processing unit forming a film on the electronic component, a tray carried by the carrying unit, and including a mount surface, and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region.

An evaporation carrier plate and an evaporation apparatus are provided in embodiments of the disclosure, both belonging to the technical field of evaporation apparatus. The evaporation carrier plate comprises a carrier plate and a viscosity reducing portion which is provided on a first side surface of the carrier plate. An OLED substrate is secured on a second side surface opposite to the first side surface, of the carrier plate, by a sensitive adhesive, and the viscosity reducing portion is configured to operate so as to decrease viscosity of the sensitive adhesive following the evaporation.

An evaporation carrier plate and an evaporation apparatus are provided in embodiments of the disclosure, both belonging to the technical field of evaporation apparatus. The evaporation carrier plate comprises a carrier plate and a viscosity reducing portion which is provided on a first side surface of the carrier plate. An OLED substrate is secured on a second side surface opposite to the first side surface, of the carrier plate, by a sensitive adhesive, and the viscosity reducing portion is configured to operate so as to decrease viscosity of the sensitive adhesive following the evaporation.

A method performed by a film deposition apparatus including a process chamber and a rotary table that is disposed in the process chamber and includes a substrate-mounting surface on which a substrate is placeable. The method includes a first cleaning process of supplying a cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a first cleaning position, and a second cleaning process of supplying the cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a second cleaning position that is lower than the first cleaning position.

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.