Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

The invention relates to vacuum processing equipment for depositing thin-film coatings. The processing line comprises at least one lock-chamber, a buffer chamber, and a processing chamber, and substrate supports on the carriages configured to pass sequentially through the chambers, with each substrate support in the form of a rotating drum. On each carriage, two rotating drums are installed in a way parallel to the moving direction of one carriage, an additional second carriage is installed with one rotating drum mounted on each carriage coaxially to its moving direction configured to rotate at a constant angular velocity, and carriages are configured to move forward at a constant linear velocity where each point of the drum surface will complete at least two full revolutions when passing through a processing zone

The present disclosure discloses an automated thin film deposition system comprises a substrate holder which is disposed in a chamber for depositing a thin film, and on which the thin film is to be deposited is placed, a temperature adjust device for controlling a temperature of the substrate placed on the substrate holder, a raw material supply device for supplying a raw material for deposition of the thin film to the substrate placed on the substrate holder, an analysis device for analyzing property of the thin film deposited on the substrate, a removal device configured to remove the thin film from the substrate, and a control device which is connected to the temperature adjust device, the raw material supply device, the analysis device, and the removal device.

The present disclosure discloses an automated thin film deposition system comprises a substrate holder which is disposed in a chamber for depositing a thin film, and on which the thin film is to be deposited is placed, a temperature adjust device for controlling a temperature of the substrate placed on the substrate holder, a raw material supply device for supplying a raw material for deposition of the thin film to the substrate placed on the substrate holder, an analysis device for analyzing property of the thin film deposited on the substrate, a removal device configured to remove the thin film from the substrate, and a control device which is connected to the temperature adjust device, the raw material supply device, the analysis device, and the removal device.

A sputtering device includes a reaction chamber, a pin mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The pin mechanism is arranged in the reaction chamber. The pin mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the pin mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

A sputtering device includes a reaction chamber, a pin mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The pin mechanism is arranged in the reaction chamber. The pin mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the pin mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. MCPs can be secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a fixture surrounding an evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter. Depending on the opening of the non-rotating mask, and the tilt angle of the rotating platter, the respective circumferential distance around and the depth into the shaded first side of the channel opening is controlled.

Apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal rotates with a workpiece on it. The PVD chamber includes a lid assembly includes a first target and a second target of a same target material, where a first surface of the first target defines a first zone of the processing region a first distance from the upper surface of the pedestal, and a second surface of the second target defines a second zone of the processing region a second distance from the plane of the upper surface of the pedestal. A system controller is configured to simultaneously control a first voltage bias for the first target and a second voltage bias for the second target.

In an embodiment, a system includes: a gas distributor assembly configured to dispense gas into a chamber; and a chuck assembly configured to secure a wafer within the chamber, wherein at least one of the gas distributor assembly and the chuck assembly includes: a first portion comprising a convex protrusion, and a second portion comprising a concave opening, wherein the convex protrusion is configured to engage the concave opening.