Approaches herein provide encapsulation of a micro battery cell of a cell matrix. The micro battery cell includes an active device, such as a thin film device, formed atop a first side of a substrate. An encapsulant may be formed over the active device, wherein the encapsulant adheres to the active device and to a second side of the substrate. In some approaches, the encapsulant penetrates a plurality of openings provided through the substrate, thus allowing the encapsulant to form along the second side of the substrate to fully envelope the micro battery cell.

A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

Approaches herein provide improved encapsulation of an energy storage device. In one approach, a thin film storage device stack is formed atop a first side of a substrate, and an encapsulant is formed over the thin film storage device stack. A recess formed in the substrate adjacent the thin film storage device stack provides an anchoring point for the encapsulant. In some approaches, the recess is provided partially through a depth of the substrate, and has a geometry to promote physical coupling between the encapsulant and the substrate.

A device for maskless thin film etching, including an ablation tool adapted to emit an ablative output for etching a surface, a gas jet associated with a source of carrier gas and adapted to emit a stream of the carrier gas at an area of the surface where the output of the ablation tool impinges, and a suction member associated with a vacuum source and adapted to collect ablated particulate from the area of the surface where the output of the ablation tool impinges, wherein the ablation tool, the gas jet, and the suction member are mounted adjacent one another.

A thin film device, comprising: an active device region, the active device region having reversible motion at least along a first direction between a first device state and a second device state; and a thin film encapsulant disposed adjacent the selective expansion region, wherein the thin film encapsulant comprises a first thickness in the first device state and a second thickness in the second device state, the first thickness being greater than the second thickness by 10% or greater, wherein the thin film encapsulant comprises a laser-etchable material.

A thin film battery may include: a cathode current collector, the cathode current collector being disposed in a first plane; a device stack disposed on the cathode current collector, the device stack comprising an anode current collector, the anode current collector being disposed in a second plane, above the first plane; and a thin film encapsulant, the thin film encapsulant disposed above the device stack, wherein the thin film encapsulant comprises a first portion extending along a surface of the anode current collector and a second portion extending along a plurality of sides of the device stack, wherein the cathode current collector extends under the second portion of the thin film encapsulant and outside of the thin film encapsulant; and wherein the anode current collector extends under the first portion of the thin film encapsulant and outside of the thin film encapsulant.

A device. The device may include: a substrate, the substrate comprising: an upper surface; and a recess extending from the upper surface into the substrate; an active device region, the active device region disposed within the recess and having a first thickness; and an encapsulant, the encapsulant disposed over the recess and over the active device region, wherein the encapsulant has a second thickness, wherein the encapsulant extends above the upper surface of the substrate to a first distance, and wherein the first distance is less than a sum of the first thickness and second thickness.

A thin film battery may include: a contact layer, the contact layer disposed in a first plane and comprising a cathode current collector and an anode current collector pad; a device stack disposed on the cathode current collector, the device stack comprising a cathode and solid state electrolyte; an anode current collector disposed on the device stack; a thin film encapsulant, the thin film encapsulant disposed over the device stack, wherein the solid state electrolyte encapsulates the cathode.

A method for masklessly fabricating a thin film battery, including securing a substrate to a substrate carrier of a first deposition chamber with a first clamping ring having an aperture, performing a first deposition on the substrate to form a first TFB layer, the aperture of the first clamping ring defining a footprint of the first layer, wherein areas of the substrate covered by the first clamping ring are excluded from the first blanket deposition, securing the substrate to a substrate carrier of a second deposition chamber with a second clamping ring having an aperture, and performing a second deposition on the substrate to form a second TFB layer over the first layer, the aperture of the second clamping ring defining a footprint of the second layer, wherein areas of the substrate and the first layer covered by the second clamping ring are excluded from the second blanket deposition.