A substrate processing apparatus includes: a tray provided in a vacuum processing container and having a recess that accommodates a target made of a low-melting-point material; a refrigerator that cools the tray; a substrate holder that holds a substrate; a reversal driver that reverses the position of the substrate holder upside down; and a rotation driver that rotates the substrate holder in a circumferential direction of the substrate.

The present invention provides a technology for reducing the attractive force of a chucking device at its surface contacting an object to be chucked to thereby eliminate or minimize the generation of dust when chucking and removing the object, and to enable control for making the attractive force of the chucking device uniform. The chucking device of the present invention includes: a main body portion 50 constituted by a dielectric and pairs of chucking electrodes 11 and 12 for attracting and holding a substrate 10, the pairs of chucking electrodes 11 and 12 being provided in the dielectric, each of the pairs of chucking electrodes 11 and 12 being opposite in polarity; and a plurality of conductive films 51 arranged on a part of the main body portion 50 on the chucking side relative to the pairs of chucking electrodes 11 and 12 in such a manner as to respectively span across a positive electrode 11a and a negative electrode 11b constituting the pair of chucking electrodes 11 and across a positive electrode 12a and a negative electrode 12b constituting the pair of chucking electrodes 12.

The present invention provides a technology for reducing the attractive force of a chucking device at its surface contacting an object to be chucked to thereby eliminate or minimize the generation of dust when chucking and removing the object, and to enable control for making the attractive force of the chucking device uniform. The chucking device of the present invention includes: a main body portion 50 constituted by a dielectric and pairs of chucking electrodes 11 and 12 for attracting and holding a substrate 10, the pairs of chucking electrodes 11 and 12 being provided in the dielectric, each of the pairs of chucking electrodes 11 and 12 being opposite in polarity; and a plurality of conductive films 51 arranged on a part of the main body portion 50 on the chucking side relative to the pairs of chucking electrodes 11 and 12 in such a manner as to respectively span across a positive electrode 11a and a negative electrode 11b constituting the pair of chucking electrodes 11 and across a positive electrode 12a and a negative electrode 12b constituting the pair of chucking electrodes 12.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

A direct-deposition system capable of forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. As a result, the vaporized atoms that pass through the shadow mask exhibit little or no lateral spread (i.e., feathering) after passing through its apertures and the material deposits on the substrate in a pattern that has very high fidelity with the aperture pattern of the shadow mask.

A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.

A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.

An evaporation source for organic material is described. The evaporation source includes an evaporation crucible, wherein the evaporation crucible is configured to evaporate the organic material; a distribution pipe with one or more outlets, wherein the distribution pipe is in fluid communication with the evaporation crucible and wherein the distribution pipe is rotatable around an axis during evaporation; and a support for the distribution pipe, wherein the support is connectable to a first drive or includes the first drive, wherein the first drive is configured for a translational movement of the support and the distribution pipe.