The present disclosure discloses a display panel and a manufacturing method thereof, and a display device, and belongs to the field of display technology. The method includes: fixing a base substrate on a supporting plate; disposing the supporting plate on which the base substrate is fixed at a specified position in a process apparatus; and performing a process corresponding to the process apparatus on the base substrate which is fixed on the supporting plate by means of the process apparatus.

Embodiments of process kit components for use in a substrate support, and substrate supports incorporating same, are provided herein. In some embodiments, the substrate support may include a body, a grounding shell formed of an electrically conductive material disposed about the body, a liner formed of an electrically conductive material disposed about the grounding shell, where the liner includes an upper lip that extends inwardly towards the body, a metal fastener disposed through the upper lip to couple the liner to the grounding shell, and a first insulator ring disposed atop the upper lip of the liner and covering the metal fastener.

A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

An assembly for a fuel injector includes a base material, a coated region formed on a surface of the base material, an uncoated region formed on a surface of the base material, in contact with and supported by a jig, and formed to be partitioned from the coated region so as to prevent the coated region from peeling off during laser welding, and a coating material stacked in a multilayer structure on the coated region. As a result, friction reduction, high hardness, impact resistance, heat resistance, and durability of the assembly may be improved, and a portion requiring the coating may be precisely coated.

Provided is a rotating shaft sealing device. The rotating shaft sealing device mounted in a semiconductor substrate processing apparatus that processes a semiconductor substrate while rotating a semiconductor loading unit accommodating the semiconductor substrate, includes: a housing that is hollow and mounted in the semiconductor substrate processing apparatus; a rotating shaft accommodated in the housing and connected to the semiconductor loading unit to transfer a rotational force to the semiconductor loading unit; a bearing rotatably supporting the rotating shaft in the housing; a sealing unit including a plurality of seals arranged in the housing to tightly seal a gap between the housing and the rotating shaft; and a power transfer unit mounted at an end of the rotating shaft to transfer a rotational force to the rotating shaft.

Some implementations described herein provide a deposition tool and methods of operation. The deposition tool may be used in the fabrication of integrated circuit devices to deposit materials and/or layers on a semiconductor substrate. The deposition tool may include a chamber (e.g., a processing chamber) that is coated with a dielectric coating on sidewalls of the chamber. The dielectric coating on the sidewalls of the chamber within the deposition tool increases a likelihood of a negative charge accumulating near the sidewalls of the chamber. The increased likelihood of negative charge accumulation near the sidewalls of the chamber may improve a uniformity of an electromagnetic field within the deposition tool (e.g., during a deposition operation) relative to another deposition too not including such a dielectric coating. The improved uniformity of the electromagnetic field may enable an improved uniformity of a material being deposited by the deposition tool to be achieved.

Some implementations described herein provide a deposition tool and methods of operation. The deposition tool may be used in the fabrication of integrated circuit devices to deposit materials and/or layers on a semiconductor substrate. The deposition tool may include a chamber (e.g., a processing chamber) that is coated with a dielectric coating on sidewalls of the chamber. The dielectric coating on the sidewalls of the chamber within the deposition tool increases a likelihood of a negative charge accumulating near the sidewalls of the chamber. The increased likelihood of negative charge accumulation near the sidewalls of the chamber may improve a uniformity of an electromagnetic field within the deposition tool (e.g., during a deposition operation) relative to another deposition too not including such a dielectric coating. The improved uniformity of the electromagnetic field may enable an improved uniformity of a material being deposited by the deposition tool to be achieved.

Provided are a single layer zinc alloy plated steel material and a fabrication method therefor, the single layer zinc alloy plated steel material comprising a base iron and a zinc alloy plating layer formed on the base iron, wherein the zinc alloy plating layer contains 13-24 wt % of Mg, and the adhesion amount of the zinc alloy plating layer is at most 40 g/m.sup.2 (excluding 0 g/m.sup.2).

Provided are a single layer zinc alloy plated steel material and a fabrication method therefor, the single layer zinc alloy plated steel material comprising a base iron and a zinc alloy plating layer formed on the base iron, wherein the zinc alloy plating layer contains 13-24 wt % of Mg, and the adhesion amount of the zinc alloy plating layer is at most 40 g/m.sup.2 (excluding 0 g/m.sup.2).