C23C14/50

Carrier with vertical grid for supporting substrates in coater
11424109 · 2022-08-23 · ·

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Carrier with vertical grid for supporting substrates in coater
11424109 · 2022-08-23 · ·

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Deposition Processing Systems Having Active Temperature Control and Associated Methods
20220259721 · 2022-08-18 ·

Several embodiments of the present technology are directed to actively controlling a temperature of a substrate in a chamber during manufacturing of a material or thin film. In some embodiments, the method can include cooling or heating the substrate to have a temperature within a target range, depositing a material over a surface of the substrate, and controlling the temperature of the substrate while the material is being deposited. In some embodiments, controlling the temperature of the substrate can include removing thermal energy from the substrate by directing a fluid over the substrate to maintain the temperature of the substrate within a target range throughout the deposition process.

FIXTURE TO BE USED IN PVD PROCESSES FOR CYLINDRICAL, ELONGATED SUBSTRATES
20220282364 · 2022-09-08 ·

A fixture system to be used in a vacuum chamber (16) of a vacuum treatment system, comprising, a spindle (1), a gear wheel, in this text referred to as sun wheel (2), a cylindrical object exhibiting properties that allow the gear wheel to mesh into it, in order to rotate said cylindrical object, in this text referred to as reel (3), a holding plate (4), wherein the sun wheel (2) and the reel (3) are manufactured in order to allow the sun wheel (2) to mesh into the reel (3), thereby rotating it.

Semiconductor memory device and semiconductor memory manufacturing apparatus
11444122 · 2022-09-13 · ·

A first memory device includes a first magnetoresistive cell having a plurality of deposition layers. A second memory device includes a second magnetoresistive cell having a plurality of deposition layers. Each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell. One of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell.

Semiconductor memory device and semiconductor memory manufacturing apparatus
11444122 · 2022-09-13 · ·

A first memory device includes a first magnetoresistive cell having a plurality of deposition layers. A second memory device includes a second magnetoresistive cell having a plurality of deposition layers. Each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell. One of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell.

BACK PLATE

A back plate configured to press a mask assembly. The mask assembly includes a glass substrate and a mask that are stacked on the glass substrate. The back plate covers a surface of the glass substrate to press the glass substrate, thereby attaching the glass substrate to the mask. The back plate includes a bottom plate and multiple protrusions, the multiple protrusions include multiple bottom plate protrusions disposed on a side of the bottom plate facing the glass substrate. The multiple bottom plate protrusions are arranged in an array. Orthographic projections of the bottom plate protrusions on a plane of the mask fall within the mask. A distance between the projections of the bottom plate protrusions disposed adjacent to an edge of the mask and the edge of the mask is greater than or equal to a preset distance.

ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR
20220301916 · 2022-09-22 ·

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.

ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR
20220301916 · 2022-09-22 ·

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.

Stage and electrode member

A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.