A film forming apparatus includes a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first axis, and a first cathode portion on which a target in a cylindrical shape containing a film forming material is mounted and configured to rotate the target about a second axis, in a chamber. The second axis is disposed at a position skewed with respect to the first axis.

A stage on which a substrate is disposed includes: a base embedded with an adsorption electrode therein; a focus ring provided above the adsorption electrode and adsorbed and held on the base; and a deposit control ring provided radially inside the focus ring on the base. A gap is formed between the focus ring and the deposit control ring in a radial direction to separate the focus ring and the deposit control ring.

A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a cold heat transfer body fixedly disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body and cooled to an extremely low temperature by a chiller disposed below the cold heat transfer body, and cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage. The stage device further includes a stage support configured to rotatably support the stage and formed in a cylindrical shape to surround an upper part of the cold heat transfer body wherein the stage support has a vacuum insulation structure, and a rotation part configured to support the stage support and rotated by a driving mechanism while being sealed with magnetic fluid.

A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a cold heat transfer body fixedly disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body and cooled to an extremely low temperature by a chiller disposed below the cold heat transfer body, and cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage. The stage device further includes a stage support configured to rotatably support the stage and formed in a cylindrical shape to surround an upper part of the cold heat transfer body wherein the stage support has a vacuum insulation structure, and a rotation part configured to support the stage support and rotated by a driving mechanism while being sealed with magnetic fluid.

There is provided a method for processing a substrate, comprising: preparing a substrate processing device including a rotatable stage on which a substrate is placed, a frozen heat transfer body fixed on a backside of the stage with a gap interposed therebetween and cooled to an extremely low temperature, a gas supply mechanism configured to supply to the gap a cooling gas for transferring a cold heat of the frozen heat transfer body to the stage, a rotation mechanism configured to rotate the stage, and a processing mechanism configured to process the substrate; preheating the stage such that a temperature of the stage reaches a steady cooling temperature within a fixed range; and after preheating, continuously processing a plurality of substrates by the processing mechanism while rotating the stage that has reached the steady cooling temperature in a state where a substrate having a specific temperature higher than or equal to room temperature is placed on the stage.

A method of controlling a substrate treatment apparatus including a chamber, a stage having elevation pins, a gas introducer disposed above the stage and introducing a treatment gas into the chamber, a first heating source heating the gas introducer, a stage elevator moving the stage up/down, and an elevator for elevation pins moving the elevation pins up/down, is provided. The method includes supporting a substrate having an oxide on the stage; etching the oxide using a treatment gas by supplying the treatment gas from the gas introducer; moving down the stage while maintaining a position of the substrate using the elevation pins; and sublimating a reaction product produced in etching the oxide by the first heating source.

A method of controlling a substrate treatment apparatus including a chamber, a stage having elevation pins, a gas introducer disposed above the stage and introducing a treatment gas into the chamber, a first heating source heating the gas introducer, a stage elevator moving the stage up/down, and an elevator for elevation pins moving the elevation pins up/down, is provided. The method includes supporting a substrate having an oxide on the stage; etching the oxide using a treatment gas by supplying the treatment gas from the gas introducer; moving down the stage while maintaining a position of the substrate using the elevation pins; and sublimating a reaction product produced in etching the oxide by the first heating source.

A physical vapor deposition chamber comprising a rotating substrate support having a rotational axis, a first cathode having a radial center positioned off-center from a rotational axis of the substrate support is disclosed. A process controller comprising one or more process configurations selected from one or more of a first configuration to determine a rotation speed (v) for a substrate support to complete a whole number of rotations (n) around the rotational axis of the substrate support in a process window time (t) to form a layer of a first material on a substrate, or a second configuration to rotate the substrate support at the rotation speed (v).

The object of the technique disclosed in this specification is to prevent or reduce the occurrence of chipping of a ceramic tubular member.

A holding device is a device that includes a plate-like member, a tubular member, and a connecting member and holds an object on a holding surface of the plate-like member. The tubular member is made of ceramic and is joined to a second surface of the plate-like member at an end of the tubular member on one side in a first direction, which is perpendicular to the holding surface. The tubular member has, at an end thereof on the other side in the first direction, a flange portion having a first through-hole. The connecting member is disposed on the other side of the tubular member in the first direction and has, in a third surface, which is an end face of the connecting member on one side in the first direction, a hole into which a fastening member inserted through the first through-hole in the flange portion is to be screwed. A specific portion, which is a portion in an outer edge line of a fourth surface of the tubular member, the portion overlapping a minimum virtual circle covering the fourth surface, is not in contact with the third surface of the connecting member.

The object of the technique disclosed in this specification is to prevent or reduce the occurrence of chipping of a ceramic tubular member.

A holding device is a device that includes a plate-like member, a tubular member, and a connecting member and holds an object on a holding surface of the plate-like member. The tubular member is made of ceramic and is joined to a second surface of the plate-like member at an end of the tubular member on one side in a first direction, which is perpendicular to the holding surface. The tubular member has, at an end thereof on the other side in the first direction, a flange portion having a first through-hole. The connecting member is disposed on the other side of the tubular member in the first direction and has, in a third surface, which is an end face of the connecting member on one side in the first direction, a hole into which a fastening member inserted through the first through-hole in the flange portion is to be screwed. A specific portion, which is a portion in an outer edge line of a fourth surface of the tubular member, the portion overlapping a minimum virtual circle covering the fourth surface, is not in contact with the third surface of the connecting member.