A sputtering device includes a reaction chamber, a thimble mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The thimble mechanism is arranged in the reaction chamber. The thimble mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the thimble mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

A sputtering device includes a reaction chamber, a thimble mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The thimble mechanism is arranged in the reaction chamber. The thimble mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the thimble mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Striated composite layers are deposited using reactive electron-beam evaporation of hafnium dioxide and silicon dioxide sublayers in a planetary rotation or linear translation system in which the hafnia and silica vapor plumes are present at the same time, and yet the hafnia and silica sublayers are distinct. The resulting StriCom materials exhibit significant improvements in laser-induced damage thresholds, thin-film stresses, environmental sensitivity, and control of refractive indices relative to monolayer hafnia films.

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

The present disclosure provides a wafer-holding device and a deposition equipment using the same, wherein the wafer-holding device includes a carrier, a first-lid ring and a second-lid ring. The carrier has a carrying surface for carrying a wafer thereon, and includes a first aligner disposed to enclose the carrying surface. The second-lid ring is connected to the first-lid ring, and includes a second aligner. The first-lid ring has a circumference larger than that of the second-lid ring, for carrying the second-lid ring thereon. The carrier is movable, and when the carrier carries the wafer thereon toward the lid rings, the first aligner thereon contacts, engages with the second aligner of the second-lid ring, thereby the second aligner is positioned to contact a specific area of the wafer and hold the wafer on the carrier, for the deposition equipment to perform a thin-film-deposition process to the wafer.

The present disclosure is a substrate-processing chamber with a shielding mechanism with the same, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one driving shaft, at least one connecting seat and a shield, wherein the driving shaft extends from the storage chamber to the reaction chamber. The connecting seat is connected to the shield and the driving shaft, wherein the driving shaft drives the shield to move between the storage chamber and the reaction chamber, via the connecting seat.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.