A method adjusts an output power of a power supply supplying electrical power to a plasma in a plasma chamber. The method includes: connecting the power supply to at least one electrode in the plasma chamber; transporting one or more substrates relative to the electrode using a substrate carrier; maintaining the plasma by the electrical power; processing the one or more substrates with the plasma; and adjusting the output power based on a parameter related to a distance between a surface of the electrode facing a carrier-substrate-assembly and a surface of the substrate-carrier-assembly facing the electrode.

A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

The present disclosure relates to a clamping device configured to clamp a substrate. The clamping device includes a clamping plate and a flattening mechanism. The flattening mechanism includes at least one adjusting member configured to operably act on the clamping plate to apply a force to the clamping plate to flatten the clamping plate.

The present disclosure relates to a clamping device configured to clamp a substrate. The clamping device includes a clamping plate and a flattening mechanism. The flattening mechanism includes at least one adjusting member configured to operably act on the clamping plate to apply a force to the clamping plate to flatten the clamping plate.

There is provided a stage mechanism, including: an electrostatic chuck having a conductive film formed on a front surface thereof, the conductive film configured to make electrically contact with a rear surface of a substrate; a conductive member electrically connected to the conductive film and formed to extend to a rear surface of the electrostatic chuck; and a moving member electrically connected to the conductive member via a connecting member and configured to move between a first position connected to a ground potential and a second position not connected to the ground potential.

There is provided a stage mechanism, including: an electrostatic chuck having a conductive film formed on a front surface thereof, the conductive film configured to make electrically contact with a rear surface of a substrate; a conductive member electrically connected to the conductive film and formed to extend to a rear surface of the electrostatic chuck; and a moving member electrically connected to the conductive member via a connecting member and configured to move between a first position connected to a ground potential and a second position not connected to the ground potential.

A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a chiller having a cold head maintained at an extremely low temperature and a cold heat transfer body fixed in contact with the cold head and disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body. The stage device further includes a heat insulating structure unit having a vacuum insulated structure and configured to surround at least the cold head and a connection portion between the cold head and the cold heat transfer body, cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage, and a stage support rotated by a driving mechanism and configured to rotatably support the stage.

An embodiment provides a deposition apparatus including a mask frame, an opening sheet, a deposition mask, and an electrostatic chuck. In the mask frame, a first opening part is defined. The opening sheet is disposed on the mask frame. In the opening sheet, a second opening part overlapping the first opening part is defined. The deposition mask is disposed on the opening sheet. In the deposition mask, a plurality of third opening parts overlapping the second opening part are defined. The electrostatic chuck is disposed on the deposition mask and on which a substrate is disposed. The substrate is disposed on a surface of the electrostatic chuck, and AC power is applied to the deposition mask.

Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

Methods and apparatus that monitors deposition on a shutter disk in-situ. In some embodiments that apparatus may include a process chamber with an internal processing volume, an enclosure disposed external to the internal processing volume where the enclosure accepts a shutter disk when the shutter disk is not in use in the internal processing volume, a shutter disk arm that moves the shutter disk back and forth from the enclosure to the internal processing volume, and at least one sensor integrated into the enclosure. The at least one sensor is configured to determine at least one film property of a material deposited on the shutter disk after a pasting process in the internal processing volume.