A film formation apparatus includes: a chamber which an interior thereof can be made vacuum; a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory; a film formation unit including a target formed of film formation material and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the film formation unit depositing by sputtering film formation material on the workpiece; a film processing unit processing the film deposited by the film formation unit on the workpiece; holding regions each holding the workpiece and provided in a circular film formation region facing the film formation unit and the film processing unit that is a region other than the rotation axis in the rotary table; and a heater provided in the holding regions.

A brake disk or drum has at least one working surface which opposes a braking member such as a brake pad or shoe. A plurality of spaced, raised island formations are provided across the working surface, with channels extending between the island formations. Each raised island formation has an outer surface which contacts a brake pad or brake shoe during braking.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

Techniques include receiving a design of an integrated computational element (ICE) including specification of a substrate and a plurality of layers, their respective target thicknesses and complex refractive indices, complex refractive indices of adjacent layers being different from each other, and a notional ICE fabricated in accordance with the ICE design being related to a characteristic of a sample; forming at least some of the layers of a plurality of ICEs in accordance with the ICE design using a deposition source, where the layers of the ICEs being formed are supported on a support that is periodically moved relative to the deposition source during the forming; monitoring characteristics of the layers of the ICEs during the forming, the monitoring of the characteristics being performed using a timing of the periodic motion of the support relative to the deposition source; and adjusting the forming based on results of the monitoring.

A box coating apparatus for vacuum coating of substrates has a vacuum chamber containing an evaporation source and a substrate holder formed as a dome related to the evaporation source and rotatable about an axis. A masking arrangement is located in between for partially shadowing the substrates on the substrate holder relative to the evaporation source. The masking arrangement comprises a fixed masking portion stationary in the vacuum chamber, and a plurality of gradient sector portions carrying gradient shields assigned to the substrates on the substrate holder, for forming a gradient mask. The gradient sector portions can be rotated about the axis between a gradient mask open position where they are stored behind the fixed masking portion, and a gradient mask closed position where they are spread like a fan between the evaporation source and the substrate holder.

An enclosure of a mobile terminal and a sputter coating apparatus for making the same are provided. The enclosure includes a substrate and a composite film layer coated onto the substrate. The composite film layer has a thickness changing along a first direction. A difference in thickness between any two regions arranged along the first direction of the composite film layer is less than or equal to 350 nanometers. The enclosure has a spatially varying color corresponding to a wavelength between 400 nanometers and 760 nanometers.

A stage on which a substrate is disposed includes: a base embedded with an adsorption electrode therein; a focus ring provided above the adsorption electrode and adsorbed and held on the base; and a deposit control ring provided radially inside the focus ring on the base. A gap is formed between the focus ring and the deposit control ring in a radial direction to separate the focus ring and the deposit control ring.