Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

A substrate side-deposition apparatus includes a substrate mounting drum rotatable within a chamber and allowing at least one substrate to be inserted and mounted in a direction from a circumferential surface toward a center; and at least one source target configured to deposit wiring based on sputtering to a lateral side portion of the substrate exposed protruding from the circumferential surface of the substrate mounting drum.

Various embodiments of a mechanical assembly for linear and rotational handling of electronic wafer substrates under high vacuum are disclosed herein.

Various embodiments of a mechanical assembly for linear and rotational handling of electronic wafer substrates under high vacuum are disclosed herein.

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.