An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

A method for preparing a film carrier for sputtering of IC units placed thereon, the method comprising the steps of: providing a carrier of IC units; removing said units from the carrier; delivering said IC units to a flipper; inverting and delivering said units to a sputtering film frame; placing the units on said sputtering film frame in an array having a pre-determined clearance about adjacent units.

A method for preparing a film carrier for sputtering of IC units placed thereon, the method comprising the steps of: providing a carrier of IC units; removing said units from the carrier; delivering said IC units to a flipper; inverting and delivering said units to a sputtering film frame; placing the units on said sputtering film frame in an array having a pre-determined clearance about adjacent units.

There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.

Provided is a mask having a plurality of cell areas, each of which has a plurality of through-portions defined therein. The mask includes a mask film including a polymer and a conductive layer disposed on at least one surface of the mask film and including conductive metal or a conductive metal oxide. Accordingly, precision of a deposition process is enhanced while reducing process time and costs in a manufacturing process of the mask, and thus the yield in manufacturing a display panel using the mask is improved. Therefore, the display panel manufactured using the mask may have improved reliability.

A chip carrier device includes a frame, a chip support and a limiter. The chip support is disposed on the frame, and includes a supporting film for chips to be adhered thereto. A peripheral portion of the supporting film is attached to a surrounding frame part of the frame. A crossing portion of the supporting film passes through a center of the supporting film, and interconnects two opposite points of the peripheral portion. The supporting film is formed with through holes. The limiter includes a limiting part that interconnects two opposite points of the surrounding frame part, that is positioned corresponding to the crossing portion, and that is positioned on one side of the supporting film where the chips are to be arranged.

A method and a vacuum-coating system for coating a band-type material, in particular made of metal. For this, the band-type material is moved, via a conveying section, in a transport direction and is vacuum-coated within a coating chamber, in which a vacuum is applied. A position of the band-type material is adjusted and/or aligned as relates to a center of the conveying section by means of at least one band position control device, which is arranged within the coating chamber.