A holding device for fastening bar cutters in order for the cutting edges thereof to be coated, wherein the fastening is configured in such a way that a plurality of bar cutters can be arranged in a row such that the cutting faces and tips thereof have the same orientation, and the holding device includes a screen which at least partially protects the cutting faces from the coating, wherein, with bar cutters arranged in a row in the manner described, the top edge of the screen projects beyond the knife tips in such a way that no knife tips protrude.

A holding device for fastening bar cutters in order for the cutting edges thereof to be coated, wherein the fastening is configured in such a way that a plurality of bar cutters can be arranged in a row such that the cutting faces and tips thereof have the same orientation, and the holding device includes a screen which at least partially protects the cutting faces from the coating, wherein, with bar cutters arranged in a row in the manner described, the top edge of the screen projects beyond the knife tips in such a way that no knife tips protrude.

A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.

A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.

The invention relates to an apparatus for immersion-based preparation of a perovskite thin film, including a sealed cavity (1). The sealed cavity (1) is internally provided with at least one semi-enclosed reactor device (2) therein, the semi-enclosed reactor device (2) includes a lower heating and sublimation device (3) and an upper heating station (4), a container (5) is provided at the top of the lower heating and sublimation device, the container (5) contains a reactant precursor, a substrate frame (6) is provided directly above the container (5), the substrate frame (6) covers an opening of the container (5), a substrate frame support platform (7) is provided at a side surface of the container (5), the substrate frame (6) is disposed on the substrate frame support platform (7), a substrate (8) to be deposited is provided at a lower bottom surface of the substrate frame (6), a surface to be deposited of the substrate (8) directly faces the reactant precursor in the container (5), and the upper heating station (4) is disposed on the substrate frame (6) to heat the substrate (8). The invention further discloses a method for preparing a perovskite solar cell by using the apparatus for immersion-based preparation of a perovskite thin film. Crystal growth of the thin film can be controlled in the preparation process, and the film formation quality, and uniformity and repeatability are improved.

The invention relates to a substrate holder (1) comprising a first contact (3) for the supply of a potential U.sub.s to the substrate (2), a charging region (12) on the surface (11) of the substrate holder (1) being designed such that it can be charged (13) with ions (101, 102) from the ion source (104) of a coating facility (100), and/or a second contact (4) is provided by means of which a freely selectable potential U.sub.H different from the potential U.sub.s can be applied to an electrode region (14) on the surface (11) of the substrate holder (1). The invention also relates to a coating facility (100) comprising at least one ion source (104) and a first voltage source (106) that can be connected to the substrate to be coated (2) such that gas ions (101) and/or ions (102) of a coating material (103) can be accelerated in the direction of the substrate (2) from the ion source (104) by means of an electric potential U.sub.s applied to the substrate (2) from the first voltage source (106), at least one secondary surface (11, 105), towards which ions (101, 102) missing the substrate (2) move, being designed (13, 113) such that it can be charged with arriving ions (101, 102), and/or at least one second voltage source (107) being provided, which can be connected to the secondary surface (11, 105) such that a freely selectable potential U.sub.s different from the potential U.sub.s can be applied to said secondary surface (11, 105). The invention further relates to an operating method and to a computer program product.

The invention relates to a substrate holder (1) comprising a first contact (3) for the supply of a potential U.sub.s to the substrate (2), a charging region (12) on the surface (11) of the substrate holder (1) being designed such that it can be charged (13) with ions (101, 102) from the ion source (104) of a coating facility (100), and/or a second contact (4) is provided by means of which a freely selectable potential U.sub.H different from the potential U.sub.s can be applied to an electrode region (14) on the surface (11) of the substrate holder (1). The invention also relates to a coating facility (100) comprising at least one ion source (104) and a first voltage source (106) that can be connected to the substrate to be coated (2) such that gas ions (101) and/or ions (102) of a coating material (103) can be accelerated in the direction of the substrate (2) from the ion source (104) by means of an electric potential U.sub.s applied to the substrate (2) from the first voltage source (106), at least one secondary surface (11, 105), towards which ions (101, 102) missing the substrate (2) move, being designed (13, 113) such that it can be charged with arriving ions (101, 102), and/or at least one second voltage source (107) being provided, which can be connected to the secondary surface (11, 105) such that a freely selectable potential U.sub.s different from the potential U.sub.s can be applied to said secondary surface (11, 105). The invention further relates to an operating method and to a computer program product.

A first memory device includes a first magnetoresistive cell having a plurality of deposition layers. A second memory device includes a second magnetoresistive cell having a plurality of deposition layers. Each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell. One of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell.

A first memory device includes a first magnetoresistive cell having a plurality of deposition layers. A second memory device includes a second magnetoresistive cell having a plurality of deposition layers. Each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell. One of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell.

A tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite composition can include: tetrahedral amorphous hydrogenated carbon (ta-C:H); and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A method of forming a tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite can include: providing a source of H, C, O, and Si as a liquid precursor; providing evaporated precursor into a vacuum chamber; forming a plasma with an RF plasma generator and/or a thermal plasma generator; and depositing, on a rotating biased substrate, a collimated layer of the tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite having tetrahedral amorphous hydrogenated carbon (ta-C:H) and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A RF rotating electrode is also provided.