A method includes transmitting a radiation toward an electrostatic chuck, receiving a reflection of the radiation, analyzing the reflection of the radiation, determining whether a particle is present on the electrostatic chuck based on the analyzing the reflection of the radiation, and moving a cleaning tool to a location of the particle on the electrostatic chuck when the determination determines that the particle is present.

Methods and apparatus for a magnetized substrate carrier apparatus are described herein. In some embodiments, a substrate carrier apparatus includes: a carrier plate having a support surface to support a substrate, a mask assembly disposed above the support surface, wherein the mask assembly includes an annular frame and a shadow mask disposed within the annular frame, and wherein the shadow mask includes one or more openings arranged in a predetermined pattern and disposed through the shadow mask, and one or more magnets disposed on or embedded within at least one of the carrier plate and the shadow mask to create a magnetic field above the support surface.

An apparatus for manufacturing a display device includes: a first housing having a first chamber; a support member disposed in the first chamber and including a frame having a plurality of openings; a plurality of adhesive patterns disposed on the frame; and a plurality of electrostatic supports overlapping the plurality of openings and supported for reciprocal movement in respective ones of the openings.

An apparatus for manufacturing a display device includes: a first housing having a first chamber; a support member disposed in the first chamber and including a frame having a plurality of openings; a plurality of adhesive patterns disposed on the frame; and a plurality of electrostatic supports overlapping the plurality of openings and supported for reciprocal movement in respective ones of the openings.

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid.

A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film formation material in the film formation room, and deposits the film formation material of the target on a surface of a workpiece facing the opening by plasma produced by a sputter gas in the film formation room, and a carrier that carries the workpiece along a predetermined carrying path so that the workpiece repeatedly pass through a facing region which faces the opening of the film formation room and a non-facing region which does not face the opening of the film formation room. The carrier includes a low-pressure position where the workpiece is placed and which causes an interior of the film formation room to be lower than a plasma ignition lower limit pressure and to be equal to or higher than a plasma electric discharge maintaining lower limit pressure when passing through the facing region, and a high-pressure position where workpiece is not placed and which causes the interior of the film formation room to be equal to or higher than the plasma ignition lower limit pressure when passing through the facing region.

A fixture (1) for use in a coating operation, preferably in the shape of a carousel rotatable around a central axis (L), comprising a support structure (5) to which a shield is fixed, the shield has a number of retainer openings (19), each designed that way that through each of the retainer openings (19) an object to be treated can be stuck so that a first portion of each object extends from the shield into the coating deposition area, whereas a second portion of each object extends from the shield into a shielded area where no coating deposition can take place, whereas the said shielded area is a common hollow space (13) which jointly accommodates a plurality of second portions.

A fixture (1) for use in a coating operation, preferably in the shape of a carousel rotatable around a central axis (L), comprising a support structure (5) to which a shield is fixed, the shield has a number of retainer openings (19), each designed that way that through each of the retainer openings (19) an object to be treated can be stuck so that a first portion of each object extends from the shield into the coating deposition area, whereas a second portion of each object extends from the shield into a shielded area where no coating deposition can take place, whereas the said shielded area is a common hollow space (13) which jointly accommodates a plurality of second portions.

A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M).