C23C14/50

Wafer holding unit

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

Wafer holding unit

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

STAGE AND ELECTRODE MEMBER
20200407840 · 2020-12-31 ·

A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.

STAGE AND ELECTRODE MEMBER
20200407840 · 2020-12-31 ·

A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.

NEGATIVE ION IRRADIATION DEVICE
20200411295 · 2020-12-31 ·

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

SUBSTRATE PROCESSING SYSTEM
20200411341 · 2020-12-31 ·

The present invention provides a system of processing one or more substrates with very high efficiency. The processing system in descriptions comprises a first process chamber with various features to improve efficiency and a transfer chamber that couples to the first process chamber with various features to improve efficiency. In addition, a second process chamber and load-locks may be used to improve efficiency furthermore. This system can increases number of the substrates in processing chamber, enable multiple processes and process sequences to be carried out in the same system, and provide high throughput substrate processing.

SUBSTRATE PROCESSING SYSTEM
20200411341 · 2020-12-31 ·

The present invention provides a system of processing one or more substrates with very high efficiency. The processing system in descriptions comprises a first process chamber with various features to improve efficiency and a transfer chamber that couples to the first process chamber with various features to improve efficiency. In addition, a second process chamber and load-locks may be used to improve efficiency furthermore. This system can increases number of the substrates in processing chamber, enable multiple processes and process sequences to be carried out in the same system, and provide high throughput substrate processing.

FLEXIBLE PAPER-BASED SURFACE-ENHANCED RAMAN SCATTERING SUBSTRATE AND METHOD FOR PREPARING SAME
20200400579 · 2020-12-24 ·

Disclosed are a flexible paper-based surface-enhanced Raman scattering (SERS) substrate and a method of preparing the same, which relate to detection of trace organics. This invention deposits a film of silver nanoparticles on a carrier such as filter paper by oblique-angle deposition to prepare the SERS substrate, which can be used for the detection of trace organics. Silver nanoparticles are closely arranged on the flexible paper, allowing the substrate for good SERS effect due to the interparticle coupling effect. Moreover, compared to the traditional rigid and brittle substrates, the substrate prepared herein can be readily used in the detection of residual organics on complex surfaces in various liquid or solid conditions by dipping, dropwise adding or wiping due to the use of a flexible and absorbent carrier.

SINGLE LAYER ZINC ALLOY PLATED STEEL MATERIAL EXHIBITING EXCELLENT SPOT WELDABILITY AND CORROSION RESISTANCE, AND FABRICATION METHOD THEREFOR
20200399745 · 2020-12-24 ·

Provided are a single layer zinc alloy plated steel material and a fabrication method therefor, the single layer zinc alloy plated steel material comprising a base iron and a zinc alloy plating layer formed on the base iron, wherein the zinc alloy plating layer contains 13-24 wt % of Mg, and the adhesion amount of the zinc alloy plating layer is at most 40 g/m.sup.2 (excluding 0 g/m.sup.2).

SINGLE LAYER ZINC ALLOY PLATED STEEL MATERIAL EXHIBITING EXCELLENT SPOT WELDABILITY AND CORROSION RESISTANCE, AND FABRICATION METHOD THEREFOR
20200399745 · 2020-12-24 ·

Provided are a single layer zinc alloy plated steel material and a fabrication method therefor, the single layer zinc alloy plated steel material comprising a base iron and a zinc alloy plating layer formed on the base iron, wherein the zinc alloy plating layer contains 13-24 wt % of Mg, and the adhesion amount of the zinc alloy plating layer is at most 40 g/m.sup.2 (excluding 0 g/m.sup.2).