An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.

An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.

A device for viewing and/or illuminating a target surface in an evacuated chamber having condensable vapor therein, the device comprising: a first section with a through hole having a first end with a first opening and a second end with a second opening; and a second section having a chamber comprising a first portion with a first opening, a second portion with a second opening and a gas inlet, where the second opening is covered with a first window, said first section is attached with the first end to the first portion of the chamber allowing free passage between the chamber and the first section, said gas inlet is connectable to a gas reservoir for feeding a gas into the chamber for prohibiting the first window in the chamber for being contaminated of the condensable vapor.

A plasma power supply system for a plasma processing system is provided. The plasma processing system includes a first plasma source and a second plasma source in adjacent sections of a plasma chamber. The plasma processing system is configured in such a way that in different sections different materials are deposited. A substrate is processed by a plasma in the plasma chamber. The power supply system includes a first power supply configured to supply a first AC power to the first plasma source, a second power supply configured to supply a second AC power to the second plasma source, a first sensor for monitoring a plasma process parameter of the first plasma source, a control unit configured to determine a first operating data related to the plasma process parameter, and control the second power supply based on the first operating data in order to decrease crazing on the substrate.

A plasma power supply system for a plasma processing system is provided. The plasma processing system includes a first plasma source and a second plasma source in adjacent sections of a plasma chamber. The plasma processing system is configured in such a way that in different sections different materials are deposited. A substrate is processed by a plasma in the plasma chamber. The power supply system includes a first power supply configured to supply a first AC power to the first plasma source, a second power supply configured to supply a second AC power to the second plasma source, a first sensor for monitoring a plasma process parameter of the first plasma source, a control unit configured to determine a first operating data related to the plasma process parameter, and control the second power supply based on the first operating data in order to decrease crazing on the substrate.

An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

A processing apparatus and a method capable of accurately measuring a real temperature of a workpiece contained and heated in a chamber. The processing apparatus includes a chamber containing a workpiece, a measurement piece installed in the chamber, and a measuring unit. The measurement piece is capable of thermal expansion and contraction in response to an internal temperature of the chamber. The measuring unit measures a thermal expansion and contraction amount of the measurement piece to thereby measure the real temperature of the workpiece.

A processing apparatus and a method capable of accurately measuring a real temperature of a workpiece contained and heated in a chamber. The processing apparatus includes a chamber containing a workpiece, a measurement piece installed in the chamber, and a measuring unit. The measurement piece is capable of thermal expansion and contraction in response to an internal temperature of the chamber. The measuring unit measures a thermal expansion and contraction amount of the measurement piece to thereby measure the real temperature of the workpiece.

A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A stage is provided to hold a sample in the vacuum chamber. The microscope has a compact evaporator in the vacuum chamber to evaporate and deposit a coating onto a surface of the sample. The microscope also has a charged-particle beam column is provided to direct a charged-particle beam onto the coating on the surface of the sample. The charged-particle beam column includes a charged-particle beam source to generate a charged-particle beam and charged-particle beam optics to converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the coating on the surface of the sample to generate an image. A controller analyzes the detected charged-particle radiation to generate an image of the sample.

A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A stage is provided to hold a sample in the vacuum chamber. The microscope has a compact evaporator in the vacuum chamber to evaporate and deposit a coating onto a surface of the sample. The microscope also has a charged-particle beam column is provided to direct a charged-particle beam onto the coating on the surface of the sample. The charged-particle beam column includes a charged-particle beam source to generate a charged-particle beam and charged-particle beam optics to converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the coating on the surface of the sample to generate an image. A controller analyzes the detected charged-particle radiation to generate an image of the sample.