A thin-film deposition system deposits a thin-film on a wafer. A radiation source irradiates the wafer with excitation light. An emissions sensor detects an emission spectrum from the wafer responsive to the excitation light. A machine learning based analysis model analyzes the spectrum and detects contamination of the thin-film based on the spectrum.

A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.

A method (200) for monitoring process conditions in a plasma PVD process as well as a method (300) for controlling a plasma PVD process are disclosed. The methods are performed in an apparatus (1) configured therefore. In accordance with the methods, an oscillating voltage signal is applied to a target (3), arranged in the apparatus (1), by means of a radio frequency generator 15). The response from the applied oscillating voltage signal is recorded by means of a radio frequency sensor (16). Based on the recorded response, information regarding at least one plasma process condition is derived. A computer program and a computer-readable medium are also disclosed.

A method (200) for monitoring process conditions in a plasma PVD process as well as a method (300) for controlling a plasma PVD process are disclosed. The methods are performed in an apparatus (1) configured therefore. In accordance with the methods, an oscillating voltage signal is applied to a target (3), arranged in the apparatus (1), by means of a radio frequency generator 15). The response from the applied oscillating voltage signal is recorded by means of a radio frequency sensor (16). Based on the recorded response, information regarding at least one plasma process condition is derived. A computer program and a computer-readable medium are also disclosed.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.

A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A motorized stage is provided to hold and move a sample in the vacuum chamber. A charged-particle beam source generates a charged-particle beam. Charged-particle beam optics converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the sample. A controller analyzes the detected charged-particle radiation to generate an image of the sample. A power supply powers at least the charged-particle beam optics and the controller. The charged-particle beam microscope weighs less than about 50 kg.

A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A motorized stage is provided to hold and move a sample in the vacuum chamber. A charged-particle beam source generates a charged-particle beam. Charged-particle beam optics converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the sample. A controller analyzes the detected charged-particle radiation to generate an image of the sample. A power supply powers at least the charged-particle beam optics and the controller. The charged-particle beam microscope weighs less than about 50 kg.

In accordance with various embodiments, an electron beam evaporator can comprise the following: a tubular target; an electron beam gun for producing at least one vapor source on a removal surface of the tubular target by means of an electron beam; wherein the removal surface is a ring-shaped axial end surface or a surface of the tubular target that extends conically or in a curved fashion from the free end edge.