A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

A multi-layer PVD film stack contains high index of refraction base material(s), followed by a semi-transparent low index of refraction cap layer. The base layer(s) provide the color range of the film. The thickness of the cap layer dictates the degree to which the film retains the color properties of the base material and the reflectivity of the cap material. The cap layer not only increases the reflectivity of the base material, but it also decreases the reflectivity lost when the PVD film is topcoat lacquered. The lacquering is advantageous in protecting the PVD film but it decreases the reflectivity of the high index of refraction materials (generally n value>1.9 at 632 nm). These materials are desirable due to their color properties but are too dark after lacquering for many commercial applications. We address this problem by utilizing a high refractive index metal, or metals, as an opaque first layer followed by a thin semi-transparent second layer of a low refractive index metal. Upon topcoat lacquering, the resulting coating retains most of the aesthetically pleasing properties of the base metal(s) but minimizes the darkening of the metal(s) after topcoat due to the low refractive index of the second layer, which is in contact with the lacquer.

A module for operating a carrier of one or more substrates to be treated in a vacuum deposition method includes a frame provided with a plate receiving, on a first side, an electronic assembly comprising radio transmitter/receiver electronics, a processor card, motor controller electronics and a battery for supplying power to the module. The processor card has a program memory with a program for controlling the motor controller electronics according to data received from a remote apparatus provided with a radio transmitting/receiving device for communicating with the module's radio transmitter/receiver electronics and, on a second side, a device for operating the carrier, which device is provided with a first motor for rotating the carrier about a first axis parallel to the plate and with a second motor for rotating the carrier about a second axis perpendicular to the plate.

A module for operating a carrier of one or more substrates to be treated in a vacuum deposition method includes a frame provided with a plate receiving, on a first side, an electronic assembly comprising radio transmitter/receiver electronics, a processor card, motor controller electronics and a battery for supplying power to the module. The processor card has a program memory with a program for controlling the motor controller electronics according to data received from a remote apparatus provided with a radio transmitting/receiving device for communicating with the module's radio transmitter/receiver electronics and, on a second side, a device for operating the carrier, which device is provided with a first motor for rotating the carrier about a first axis parallel to the plate and with a second motor for rotating the carrier about a second axis perpendicular to the plate.

A device for vapor depositing metal is disclosed. The device includes a vapor-deposition chamber and a storage chamber. The storage chamber can be connected to the vapor-deposition chamber by an openable and closable isolating door. At least one storage unit configured to store at least one metal evaporation material is disposed in the storage chamber. At least one feeding unit in one-to-one correspondence with the at least one storage unit is disposed in the vapor-deposition chamber.

A device for vapor depositing metal is disclosed. The device includes a vapor-deposition chamber and a storage chamber. The storage chamber can be connected to the vapor-deposition chamber by an openable and closable isolating door. At least one storage unit configured to store at least one metal evaporation material is disposed in the storage chamber. At least one feeding unit in one-to-one correspondence with the at least one storage unit is disposed in the vapor-deposition chamber.

A magnetron plasma sputtering arrangement including an evacuable chamber, wherein in the evacuable chamber a tuning electrode, operatively connected to a biasing source with respect to ground, and including an aperture defining at least one axis of length, is arranged in a flow path for plasma between a sputtering head and a substrate. A plasma sputtered material originating at a sputtering target will traverse the aperture before depositing onto the surface of the substrate as a thin film.

The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.