A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH.sub.2].sub.2.sup.+MX.sub.3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX.sub.3 compound. Methods of forming a piezoelectric device are also disclosed.

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

A substrate film forming machine table and a usage method. The substrate film forming machine table comprises: a first substrate bearing inlet and outlet chamber; a second substrate bearing inlet and outlet chamber; a film forming chamber; an intermediate chamber; a pump set connected to the first substrate bearing inlet and outlet chamber; a second pump connected to the intermediate chamber; a third pump connected to the film forming chamber and the second substrate bearing inlet and outlet chamber; at least one backup pump, which is provided to connect to the film forming chamber and the second substrate bearing inlet and outlet chamber so as to extract air from the film forming chamber and the second substrate bearing inlet and outlet chamber when the third pump is damaged; or, connecting to the intermediate chamber so as to extract air from the intermediate chamber when the second pump is damaged.

Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a high power bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.

According to one aspect of the present disclosure, a method of coating a substrate (100) with at least one cathode assembly (10) having a sputter target (20) and a magnet assembly (25) that is rotatable around a rotation axis (A) is provided. The method comprises: Coating of the substrate (100) while moving the magnet assembly in a reciprocating manner in a first angular sector (12); and subsequent coating of the substrate (100) while moving the magnet assembly (25) in a reciprocating manner in a second angular sector (14) different from the first angular sector (12). According to a second aspect, a coating apparatus for performing said method is provided.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

Provided is an optical film (composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing an optical film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, characterized in that the optical film comprises cesium, tungsten, and oxygen, and a refractive index n and an extinction coefficient k of the optical film at each of wavelengths [300 nm, 350 nm, 400 nm, 450 nm, . . . , 1700 nm] specified at 50 nm intervals in a wavelength region from 300 nm to 1700 nm are set respectively within specified numerical ranges.