The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of sequentially ordered deposition chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A substrate fixture contains a substrate. The substrate fixture comprises a fixture frame. The fixture frame is defined by multiple circular members adjacently joined in a circular arrangement. Each circular member has a fixture frame opening sized to receive the substrate. Lens support arms may integrate into the circular members, extending in a curved disposition into the fixture frame opening to retain the substrate. A deposition method is also disclosed.

A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of sequentially ordered deposition chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A substrate fixture contains a substrate. The substrate fixture comprises a fixture frame. The fixture frame is defined by multiple circular members adjacently joined in a circular arrangement. Each circular member has a fixture frame opening sized to receive the substrate. Lens support arms may integrate into the circular members, extending in a curved disposition into the fixture frame opening to retain the substrate. A deposition method is also disclosed.

Examples disclosed herein relate to an apparatus and method of forming thin film layers on a substrate. A first piezoelectric material layer is deposited on the substrate in a first chamber. The first piezoelectric material layer is formed on the substrate while the substrate is at a first temperature. A second piezoelectric material layer is deposited on the first piezoelectric material layer after cooling the substrate to a second temperature. The second temperature is lower than the first temperature. The first piezoelectric material layer and the second piezoelectric material layer both comprise a first piezoelectric material.

Implementations disclosed describe, among other things, a system and a method of scanning a substrate with a beam of light and detecting for each of a set of locations of the substrate, a respective one of a set of intensity values associated with a beam of light reflected from (or transmitted through) the substrate. The detected intensity values are used to determine a profile of a thickness of the substrate.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

A device may include one or more memories and one or more processors, communicatively coupled to the one or more memories, to receive design information, wherein the design information identifies desired values for a set of layers of an optical element to be generated during one or more runs; receive or obtain historic information identifying a relationship between a parameter for the one or more runs and an observed value relating to the one or more runs or the optical element; determine layer information for the one or more runs based on the historic information, wherein the layer information identifies run parameters, for the set of layers, to achieve the desired values; and cause the one or more runs to be performed based on the layer information.

A device may include one or more memories and one or more processors, communicatively coupled to the one or more memories, to receive design information, wherein the design information identifies desired values for a set of layers of an optical element to be generated during one or more runs; receive or obtain historic information identifying a relationship between a parameter for the one or more runs and an observed value relating to the one or more runs or the optical element; determine layer information for the one or more runs based on the historic information, wherein the layer information identifies run parameters, for the set of layers, to achieve the desired values; and cause the one or more runs to be performed based on the layer information.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.