A lightweight display includes a plurality of display modules having a plurality of pixels carried by a display mounting frame. A support frame integral with the display mounting frame provides support. An electronic support member carries electrical components electrically communicating with the plurality of display modules for controlling the display of an image. Wherein the depth of the plurality of display modules, display mounting frame, support frame and electronic support member is less than four inches when defining a display assembly. Also wherein the display assembly has a screen size measured diagonally in a range of 114 inches to 224 inches and a weight in the range of 90 pounds to 120 pounds and wherein the display assembly has an aspect ratio ranging from 1.67 to 1.82.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

An evaporation source for organic material is described. The evaporation source includes an evaporation crucible, wherein the evaporation crucible is configured to evaporate the organic material; a distribution pipe with one or more outlets, wherein the distribution pipe is in fluid communication with the evaporation crucible and wherein the distribution pipe is rotatable around an axis during evaporation; and a support for the distribution pipe, wherein the support is connectable to a first drive or includes the first drive, wherein the first drive is configured for a translational movement of the support and the distribution pipe.

A glass film transfer apparatus includes a wind-off section that winds off the glass film from a roll around which the glass film is wound, a long interleaf being laminated on the glass film; a glass film transfer section that transfers the glass film which is wound off from the wind-off section and is separated from the interleaf; a take-up section that takes up the glass film transferred by the glass film transfer section in the form of roll, while laminating the long interleaf on the glass film; and an interleaf transfer section that carries out the interleaf separated from the glass film which is wound off from the wind-off section, and carries in the interleaf toward the take-up section. Furthermore, the glass film transfer apparatus includes a take-up adjusting mechanism that adjusts a take-up state of the interleaf and the glass film in the take-up section.

An exemplary embodiment provides a thin film transistor array panel, including: a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer. The oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer includes an oxide semiconductor including silicon, and the second layer contacts the insulating layer.

The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h=0, k=0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees.

The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.

The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.