Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

An apparatus for making substrates of a display device includes: a crucible to vaporize a deposition material and including a first metal; and a sacrificial material electrically connected to the crucible and including a second metal having a second ionization energy less than a first ionization energy of the first metal.

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

A method for reducing the adhesion of dirt to a substrate is provided, where a thin, incompletely closed layer of a material is deposited on at least one surface area of the substrate by means of a vacuum deposition process, and then said surface area is acted upon by accelerated ions.

This disclosure provides systems, methods, and apparatus for tempering or chemically strengthening glass substrates having electrochromic devices fabricated thereon. In one aspect, an electrochromic device is fabricated on a glass substrate. The glass substrate is then tempered or chemically strengthened. The disclosed methods may reduce or prevent potential issues that the electrochromic device may experience during the tempering or the chemical strengthening processes, including the loss of charge carrying ions from the device, redistribution of charge carrying ions in the device, modification of the morphology of materials included in the device, modification of the oxidation state of materials included in the device, and the formation of an interfacial region between the electrochromic layer and the counter electrode layer of the device that impacts the performance of the device.

A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

A substrate carrier unit includes a substrate carrier and a phase transition material. The substrate carrier defines an isolated space therein. The phase transition material is filled into the isolated space of the substrate carrier and has a melting point ranging between 18° C. and 95° C. The phase transition material is capable of absorbing thermal energy from the substrate carrier as latent heat to change the phase from solid to liquid.

The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer,

According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.