A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

A thin walled balloon formed in polymer tubing has a patterned metal layer on its outer surface, created by physical vapor deposition (PVD). The pattern is defined by a stencil mask assembled around the balloon, with the balloon inflated therein. The PVD occurs without deforming or degrading the polymer material of the balloon, by actively pulling heat away from the balloon a) by forming the stencil mask out of metal; b) by providing a metal heat conduction path away from the balloon to a heat sink, such as outside the vacuum chamber, and/or c) by flow of a cooling fluid within the balloon during the PVD process. Proper PVD process parameters are selected to minimize heat generation, such as having argon pressure in the range of 0.8 to 1.2 milli-torr and generating the plasma at a power of less than about 200 watts/ square inch of effective target surface area.

A thin walled balloon formed in polymer tubing has a patterned metal layer on its outer surface, created by physical vapor deposition (PVD). The pattern is defined by a stencil mask assembled around the balloon, with the balloon inflated therein. The PVD occurs without deforming or degrading the polymer material of the balloon, by actively pulling heat away from the balloon a) by forming the stencil mask out of metal; b) by providing a metal heat conduction path away from the balloon to a heat sink, such as outside the vacuum chamber, and/or c) by flow of a cooling fluid within the balloon during the PVD process. Proper PVD process parameters are selected to minimize heat generation, such as having argon pressure in the range of 0.8 to 1.2 milli-torr and generating the plasma at a power of less than about 200 watts/ square inch of effective target surface area.

A system for depositing coating on a workpiece includes a deposition chamber within which is formed a vortex to at least partially surround a workpiece therein.

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

A method of manufacturing a battery cathode for a solid state battery is provided. The method includes generating a plasma remote from one or more targets suitable for forming cathodes, such as LiCoO.sub.2, exposing the plasma target or targets to the plasma, thereby generating sputtered material from the target or targets, and depositing sputtered material on a first portion of a substrate, thereby forming crystalline material, such as LiCoO.sub.2 on the first portion of the substrate.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.