A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives.

To provide a hot forging die made of a Ni-based superalloy, which is free from any deteriorations in working environment and die shape during hot forging in the air, and also provide a manufacturing process for a forged product using the same and a manufacturing process for a hot forging die. The hot forging die includes: a base body made of a Ni-based superalloy consisting of, by mass, 10.3 to 11.0% of W, 9.0 to 11.0% of Mo, and 5.8 to 6.8% of Al and balance of Ni with inevitable impurities; and a coating layer of inorganic material that is formed on at least one of a forming surface and a side surface of the die and contains 30 mass % or more in total of one or more of Si, Cr, and Al out of Si and metal elements.

An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack formed of hydrogenated silicon layers and lower-refractive index layers stacked in alternation. The hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 mn to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm.

The present disclosure relates to a layer stack and methods of preparing the same for use as an oxidation and chemical barrier with superalloy substrates, including Ni, Ni—Co, Co, and Ni-aluminide based substrates. The layer system can be applied to a substrate in a single physical vapor deposition process with no interruption of vacuum conditions.

A semiconductor device with high reliability is provided. A first step of forming a metal oxide containing indium over a substrate and a second step of performing microwave treatment from above the metal oxide are included. The first step is performed by a sputtering method using an oxide target containing indium. The second step is performed using a gas containing oxygen under reduced pressure, and by the second step, a defect in which hydrogen has entered an oxygen vacancy (VoH) in the metal oxide is divided into an oxygen vacancy (Vo) and hydrogen (H).

An erbium-doped bismuth oxide emitting light from high-intensity Er.sup.3+ ions is produced. Provided is a method of producing an erbium-doped bismuth oxide film including: a step of disposing a first sputtering target containing the bismuth oxide, a second sputtering target containing erbium oxide (Er.sub.2O.sub.3), and a substrate in a closed film forming chamber separately from each other; a step of setting the temperature of the substrate to room temperature, introducing H.sub.2O gas into the film forming chamber at a predetermined pressure, and supplying H.sub.2O gas in the vicinity of the substrate; a step of simultaneously sputtering the first sputtering target and the second sputtering target to deposit a part of the first sputtering target and a part of the second sputtering target on the substrate to form a precursor film; and a step of forming a crystalline film by heating the precursor film at a predetermined temperature.

Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

An apparatus for in-vivo measuring H.sub.2O.sub.2 oxidation within a living tissue. The apparatus includes an electrochemical probe and an electrochemical stimulator-analyzer. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode, a counter electrode, and a reference electrode. The working electrode includes a first biocompatible conductive needle coated with a layer of vertically aligned multi-walled carbon nanotubes. The counter electrode includes a second biocompatible conductive needle. The reference electrode includes a third biocompatible conductive needle. The electrochemical stimulator-analyzer is configured to generate a set of electrical currents in a portion of the living tissue.