Provided is a technique of forming an aluminum film that has high flatness and less cavities. Step S11 is forming a first film having a thickness that is equal to or greater than 0.1 μm and less than 1 μm, by sputtering a material onto a substrate. Step S12 is reflowing the first film by heating the first film. Step S13 is forming a second film by sputtering the material onto the first film that has been reflowed. Step S14 is reflowing the second film by heating the second film. Step S15 is forming a third film by sputtering the material onto the second film that has been reflowed. Step S16 is reflowing the third film by heating the third film.

A method for forming a low-resistivity tantalum thin film having the following steps: depositing a tantalum layer on a substrate, the tantalum of the layer having a β phase, treating the deposited tantalum layer by exposure to a radio frequency hydrogen plasma, such that the layer has tantalum in a mixed β-α phase, at least partially desorbing the hydrogen by carrying out at least one of the following steps: exposure to a radio frequency inert gas plasma, and thermal annealing. The treatment step being configured such that the tantalum layer is subjected to temperatures of less than or equal to 300° C.

A nanoparticle coater includes a housing; a nanoparticle discharge slot; a first combustion slot; and a second combustion slot.

A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.

A ferritic stainless steel sheet comprises a chemical composition containing, in mass %, C: 0.030% or less, Si: 1.0% or less, Mn: 1.0% or less, P: 0.040% or less, S: 0.010% or less, Cr: 11.0% to 30.0%, Al: 8.0% to 20.0%, Ni: 0.05% to 0.50%, Mo: 0.01% to 6.0%, N: 0.020% or less, and at least one selected from the group consisting of Zr: 0.01% to 0.20% and Hf: 0.01% to 0.20%, with a balance consisting of Fe and inevitable impurities.

A method for preparing a NdFeB permanent magnetic material may include providing a covered NdFeB magnetic powder by depositing heavy rare earth particles or high-melting particles onto a NdFeB magnetic powder by physical vapor deposition; and performing orientation molding and sintering on the covered NdFeB magnetic powder to provide the NdFeB permanent magnetic material.

A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including Hf.sub.xA.sub.1-xO.sub.2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in Hf.sub.xA.sub.1-xO.sub.2 is in a range of 0.3 to 0.5.

The present invention relates to a coated cutting tool including a Cr-containing cemented carbide substrate having WC, a binder phase and a gamma phase. The cemented carbide includes a gradient surface zone with a thickness of between 2 to 100 μm, which is binder phase enriched and depleted of gamma phase. The cemented carbide includes M.sub.7C.sub.3 carbides in an amount of between 0.5 to 7 area % measured in the bulk, where M is elements being Cr, W and at least one binder metal. The coated cutting inserts shows an improved edge line toughness.

A method includes forming an amorphous magnetic film on a film formation subject by sputtering a target that includes any one selected from a group consisting of Mn.sub.3Sn, Mn.sub.3Ge, and (Mn.sub.1-xFe.sub.x)Ge as a main component and crystalizing the amorphous magnetic film by heating the amorphous magnetic film. The crystalizing includes heating the amorphous magnetic film to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.

A method of fabricating a silicon carbide material is provided. The method includes the following steps. A first annealing process is performed on a wafer or on an ingot that forms the wafer after wafer slicing. The conditions of the first annealing process include: a heating rate of 10° C./minute to 30° C./minute, an annealing temperature of 2000° C. or less, and a constant temperature annealing time of 2 minutes or more and 4 hours or less for performing the first annealing process. After performing the first annealing process, an average resistivity of the wafer or the ingot is greater than 10.sup.10 Ω.Math.cm.