A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an Nb.sub.3Sn layer on the niobium structure, and doping the Nb.sub.3Sn layer with nitrogen, thereby forming a nitrogen doped Nb.sub.3Sn layer on the niobium structure.

Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

A metal oxide thin film formed of β-MoO.sub.3 includes at least one doping element of the group Re, Mn, and Ru. Further, there is described a method of producing such a metal oxide thin film via sputtering and a thin film device with a metal oxide thin film of β-MoO.sub.3 that includes at least one doping element selected from the group Re, Mn, and Ru.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Disclosed is a light transmitting laminate for optical use that is excellent in adhesion and workability. The light transmitting laminate for optical use contains a polyolefin layer and a thin film layer made of a metal layer or a metal oxide layer. The metal layer is made of at least one selected from silver, a silver alloy, aluminum, an aluminum alloy, iron, and an iron alloy. The metal oxide layer is made of at least one selected from an indium tin oxide, an indium zinc oxide, a zinc oxide, a tin oxide, an aluminum zinc oxide, a gallium zinc oxide, and an indium gallium zinc oxide. The thin film layer is formed by sputtering. The polyolefin layer contains on both surfaces thereof silica particles.

The invention discloses a method for preparing a flaky iron oxide. The flaky iron oxide is obtained through a vacuum coating machine. The vacuum coating machine includes a vacuum pump, a vacuum pipeline arrangement, a vacuum coating chamber, a flaky iron oxide supporting chamber and an electrical discharging gas inlet. High-energy particles generated by an iron oxide target are deposited on the surface of the conveying belt; and then the flaky iron oxide on a conveying belt is stripped and calcined to obtain the flaky iron oxide with bright color. By means of the method, vacuum sputtering time can be controlled to prepare the flaky iron oxide with various diameter-to-thickness ratios, and pollution caused by a traditional chemical deposition preparation method can be avoided. The preparation method is simple and environment-friendly. Due to the adoption of roller transmission, the production efficiency is improved.

A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10.sup.−4 to 2.8×10.sup.−4 Ω.Math.cm.

A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

The present invention is a method for mass-production of a recording medium with the component composition thereof monotonically changing along the film thickness direction. In the method, the magnetic recording medium that includes at least a substrate, and first magnetic recording layer and second magnetic recording layer as the magnetic recording layer. The method includes: laminating a second magnetic layer of FePtRh on a first magnetic layer of FePt or FePtRh with heating. In the method, heat treatment may be preheat-treatment or postheat-treatment, when laminating the second magnetic layer of FePtRh onto the first magnetic layer of FePtRh, the concentration of Rh in the second magnetic layer is higher than that of the first magnetic layer.

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.