The disclosure is directed to enhanced silver coated aluminum substrates for use as optical mirrors in which galvanic corrosion between the silver and aluminum is prevented and a method of making such silver coating and mirrors. The optical mirror according to the disclosure has an in-situ formed barrier layer inserted between the aluminum substrate and the silver layer. In addition, selected layers are densified by carrying out their deposition using a high power RF ion source during their deposition.

An equipment for producing a film comprises a linear plasma generating module and a plasma distributing module. When the plasma flows out from the slit opening of the linear plasma generating module, the sleeve of the plasma distributing module rotates with respect to the liner plasma generating module, so that the plasma flowing out from the slit opening is further uniformly distributed outward by passing through the plurality of holes of the sleeve. The equipment for producing a film is applicable to selenization sulfuring process of the glass substrate.

A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a polymeric substrate. The film includes at least one metal. A metal in the film is converted to a metal oxide using microwave radiation. One example device prepared by the method includes a polyethylene napthalate substrate and a film on the substrate, wherein the film includes a semiconducting copper oxide and silver as a dopant.

Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.

The invention provides a method for manufacturing a processed plastic film, which involves reducing the amount of charge on a plastic film traveling in a vacuum. In particular, the method includes a step for removing charge by a charge removal method in which a conductor having a radius of curvature of 1 mm or less is installed near the plastic film in the width direction of the plastic film, the shortest distance between the surface of the plastic film and the conductor is set to 2-10 mm, and the grounded conductor is used while maintaining the pressure therebetween at 8-800 Pa.

A window includes: a base layer; and a protection layer disposed on the base layer and including a fluorine-based crosslinked polymer, wherein the fluorine-based crosslinked polymer includes a first polymer chain, a second polymer chain, and a crosslinking portion that bonds carbon atoms of the first polymer chain to carbon atoms of the second polymer chain.

A method for developing a coating having a high light transmission and/or a low light reflection is provided. The method relates to a process for developing a coating with a high light transmission and/or a low light reflection, where the coating is deposited on a substrate. The coating is deposited as a mixed coating comprising a material A and a material B, where the coating is developed to have a coating thickness profile in which the lowest proportion of the material B is on the substrate surface and the highest proportion of coating material is on the coating surface. The material B is at least partially removed from the coating after deposition of the coating on the substrate.

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti.sub.1-wCr.sub.w).sub.xAl.sub.yN.sub.z (where 0.0<w<1.0, 0.70y/(x+y)0.95, 0.4z0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

A semiconductor device with high reliability is provided. A first step of forming a metal oxide containing indium over a substrate and a second step of performing microwave treatment from above the metal oxide are included. The first step is performed by a sputtering method using an oxide target containing indium. The second step is performed using a gas containing oxygen under reduced pressure, and by the second step, a defect in which hydrogen has entered an oxygen vacancy (VoH) in the metal oxide is divided into an oxygen vacancy (Vo) and hydrogen (H).

Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and/or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. The various embodiments may maintain (or increase) the Seeback coefficient and electrical conductivity of thermoelectric materials and simultaneously decrease the thermal conductivity of the thermoelectric materials.