Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.

A method of making an enhanced aluminium mirror for vacuum ultraviolet (VUV) optics includes depositing a reflective coating comprising aluminium metal to at least one surface of a substrate through physical vapor deposition (PVD) to produce a mirror comprising the substrate and the reflective coating. The method further includes removing aluminium oxides from an outer surface of the reflective coating by conducting atomic layer etching (ALE) in an Atomic Layer Deposition (ALD) system to produce an etched surface of the reflective coating and depositing an ALD protective layer onto the etched surface of the reflective coating by conducting atomic layer deposition in the ALD system to produce the enhanced aluminium mirror. The enhanced aluminium mirror includes the substrate, the reflective coating deposited on the substrate, and the ALD protective layer covering the etched surface of the reflective coating.

This application relates to a memory device and a method for manufacturing the same, including: a substrate on which an insulation structure and a plurality of first active structures are formed is provided. The plurality of first active structures are arranged at intervals in the insulation structure. A word line conductive layer is formed on the substrate by a physical vapor deposition process. The word line conductive layer is patterned and etched to obtain a plurality of word line structures arranged in parallel and at intervals and filling slots located between adjacent word line structures. The filling slots comprise first filling slots that expose both parts of top surfaces of the first active structures and parts of the top surface of the insulation structure. Second active structures are formed in the first filling slots, and isolation structures are formed in the first filling slots.

Provided herein is a film and methods of producing the same. The film includes a substrate and a layer adjacent to the substrate, wherein a surface of the layer comprises spaced apart protrusions. The methods include providing a substrate, depositing a layer on at least a portion of the substrate, decomposing the layer to form at least a first phase of material and a second phase of material, and removing at least a portion of the second phase from the decomposed layer to form a structured layer.

A process for forming high surface area graphene structures includes: depositing at least one metal on a surface of silicon carbide; heating the at least one metal and the silicon carbide to cause at least one of the metals to react with a portion of the silicon carbide to form silicide regions extending into an unreacted portion of the silicon carbide and graphene disposed between the silicide regions and the unreacted portion of the silicon carbide; and removing the silicide regions to provide a silicon carbide structure having a highly irregular surface and a surface layer of graphene.

According to one embodiment, a method for manufacturing a silicon carbide base body is disclosed. The method can include preparing a first base body including silicon carbide. The first base body includes a first base body surface tilted with respect to a (0001) plane of the first base body. A first line segment where the first base body surface and the (0001) plane of the first base body intersect is along a [11-20] direction of the first base body. The method can include forming a first layer at the first base body surface. The first layer includes silicon carbide. The method can include removing a portion of the first layer. The first-layer surface is tilted with respect to a (0001) plane of the first layer. A second line segment where the first-layer surface and the (0001) plane of the first layer intersect is along a [1100] direction.

Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.

The invention relates to a metallic foam body, comprising (a) a metallic foam body substrate made of at least one metal or metal alloy A; and (b) a layer of a metal or metal alloy B present on at least a part of the surface of the metallic foam body substrate (a), wherein A and B differ in their chemical composition and/or in the grain size of the metal or metal alloy, and wherein the metal or metal alloy A and B is selected from a group consisting of Ni, Cr, Co, Cu, Ag, and any alloy thereof; obtainable by a process comprising the steps (i) provision of a porous organic polymer foam; (ii) deposition of at least one metal or metal alloy A on the porous organic polymer foam; (iii) burning off of the porous organic polymer foam to obtain the metallic foam body substrate (a); and (iv) deposition by electroplating of the metallic layer (b) of a metal or metal alloy B at least on a part of the surface of the metallic foam body (a). The invention moreover relates to a process for the production of the metallic foam body and a use of the metallic foam body.

There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.