Patent classifications
C23C14/5873
LAMINATE FILM AND ELECTRODE SUBSTRATE FILM, AND METHOD OF MANUFACTURING THE SAME
[Object] Provided are a laminate film and an electrode substrate film with excellent etching quality, in which a circuit pattern formed by etching processing is less visible under highly bright illumination, and a method of manufacturing the same.
[Solving Means] A laminate film includes a transparent substrate 60 formed of a resin film and a layered film provided on at least one surface of the transparent substrate. The layered film includes metal absorption layers 61 and 63 as a first layer and metal layers (62, 65), (64, 66) as a second layer, counted from the transparent substrate side. The metal absorption layers are formed by a reactive sputtering method which uses a metal target made of Ni alone or an alloy containing two or more elements selected from Ni, Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, and Cu, and a reactive gas containing oxygen. The reactive gas contains hydrogen.
ION IMPLANTATION TO MODIFY GLASS LOCALLY FOR OPTICAL DEVICES
Embodiments described herein provide for optical devices with methods of forming optical device substrates having at least one area of increased refractive index or scratch resistance. One method includes disposing an etch material on a discrete area of an optical device substrate or an optical device layer, disposing a diffusion material in the discrete area, and removing excess diffusion material to form an optical material in the optical device substrate or the optical device layer having a refractive index greater than or equal to 2.0 or a hardness greater than or equal to 5.5 Mohs.
CRUCIBLE APPARATUS AND DEPOSITION APPARATUS INCLUDING THE SAME
An apparatus for making substrates of a display device includes: a crucible to vaporize a deposition material and including a first metal; and a sacrificial material electrically connected to the crucible and including a second metal having a second ionization energy less than a first ionization energy of the first metal.
FABRICATION METHOD OF SILICON NANONEEDLE ARRAY WITH ULTRA-HIGH ASPECT RATIO
A fabrication method of a silicon nanoneedle array with ultra-high aspect ratio includes the following steps: spin-coating two photoresist layers of methyl methacrylate (MMA) and polymethyl methacrylate (PMMA) A2 on a silicon substrate; subjecting the silicon substrate coated with the two photoresist layers of MMA and PMMA A2 to electron beam lithography to form a photoresist pattern on the silicon substrate; subjecting the silicon substrate on which the photoresist pattern is formed to electron beam evaporation (EBE) to deposit an Al film layer on the silicon substrate; subjecting the silicon substrate on which the Al film layer is deposited to stripping to obtain an Al film array deposited on the silicon substrate, which provides a mask for the subsequent inductively coupled plasma (ICP) etching process; and subjecting the silicon substrate covered with the Al mask to ICP silicon etching to obtain a silicon nanoneedle array structure.
METHOD FOR REDUCING THE ADHESION OF DIRT TO A SUBSTRATE
A method for reducing the adhesion of dirt to a substrate is provided, where a thin, incompletely closed layer of a material is deposited on at least one surface area of the substrate by means of a vacuum deposition process, and then said surface area is acted upon by accelerated ions.
Electromagnetic Wave Absorbing/Radiating Material, Method of Manufacturing Same, and Infrared Source
The present invention relates to an electromagnetic wave absorbing/radiating material which includes: a conductor; and a plurality of conductor discs disposed in an array above the surface of the conductor or a perforated conductor layer with a plurality of holes defined in an array above the surface of the conductor.
WIRE-GRID POLARIZING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
A wire-grid polarizing element comprising a base substrate, and a carbon nanotube wire-grid and a metal wire-grid which are disposed on the base substrate, wherein the metal wire-grid and the carbon nanotube wire-grid are laminated in a direction perpendicular to the base substrate, and the carbon nanotube wire-grid comprises a plurality of carbon nanotubes having the same axial direction.
METHOD FOR DECORATING A TIMEPIECE COMPONENT
The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer,
According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.
METHOD FOR MANUFACTURING A COMPONENT
A method for manufacturing a component is provided. The method includes providing one or more notches on a surface of the component. Further, depositing a coating on the surface to provide a thickness of the coating on the surface, is performed. The method also includes removing, at least partially, the coating from the surface such that the thickness of the coating over the notches is different from the thickness of the coating on the surface adjacent to the notches.
Methods of manufacturing a coated structure on a substrate
A method of manufacturing a coated structure on a substrate includes positioning a substrate in a vapor deposition chamber having a crucible with source material. The method includes evaporating the source material with electron beams from an irradiation source, the evaporated source material being deposited on the substrate as a coating layer. The method includes ablating the coating layer with the electron beams to selectively remove portions of the coating layer leaving a circuit structure on the substrate. The evaporating and ablating are accomplished in situ within the vapor deposition chamber using the same irradiation source.