A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.

A method for producing a consolidated fiber preform intended for the manufacture of a part made of composite material, includes shaping a fiber texture in a heated metal mold, the texture being pre-impregnated with a transient or fugitive material, or shaping a fiber texture in a metal mold and injecting a transient or fugitive material into the fiber texture held in shape in the metal mold, cooling the mold, removing the set fiber preform from the mold, coating the fiber preform with a slurry containing a powder of ceramic or carbon particles, heat-treating the coated fiber preform so as to form a porous shell around the fiber preform by consolidation of the slurry and so as to remove the transient or fugitive material present in the fiber preform, consolidating the fiber preform by gas-phase chemical infiltration.

A method and apparatus for reducing bevel peeling during and after plasma enhanced chemical vapor deposition (PECVD) of a material layer on a substrate is disclosed. In one embodiment a method of processing a substrate includes positioning a substrate in a processing volume of a processing chamber, plasma treating the surface of the substrate with a treatment plasma formed of a treatment gas, chucking the substrate to the substrate support, and depositing a material layer onto the surface of the substrate by exposing the surface of the substrate to a deposition plasma. Here, the treatment gas is substantially free of carbon, silicon, or metal deposition precursors, and an RF power used to form the treatment plasma is less than about 1.42 Watts per cm.sup.2 of substrate surface (W/cm.sup.2). The deposition plasma is formed from one or a combination of a carbon, silicon, or metal precursors, and an RF power used to ignite and maintain the deposition plasma is more than about 2.12 W/cm.sup.2.

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.

A process for depositing a coating on short fibres of carbon or silicon carbide from a coating precursor, the short fibres having a length of between 50 m and 5 mm, the process including at least heating the short fibres by placing a mixture including the fibres and a liquid phase of the coating precursor in a microwave field so as to bring the surface of the fibres to a temperature allowing the coating on the fibres from the coating precursor to be formed by calefaction.

A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (.sub.A.sub.B)/.sub.B is within the range of 0.1%, wherein .sub.A is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and .sub.B is an average value of peak wave numbers of micro-Raman spectra in the outer region.