A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.

A method for processing a holding plate (10) of a clamping device (in particular clamp wafer chuck) for holding a component, in particular a wafer, wherein the holding plate (10) has a SiC-based surface (12) on which at least one protruding, SiC-based surface element (13) is formed, includes the steps of locally limited heating of the holding plate (10) in a predetermined surface section and creating the surface element (13) at the predetermined surface section by chemical vapor deposition, in particular by means of laser CVD. Applications of the method exist in repairing a holding plate (10) of a clamping device or manufacturing a holding plate (10) of a clamping device. Furthermore, a holding plate of a clamping device for holding a component, in particular a wafer, is described.

In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

There is provided a film-forming apparatus and a film-forming method. The film-forming apparatus, in a first period, sets the second heater to a temperature T1 at which no film is formed on a substrate disposed on the mounting stand without supplying a precursor gas into the process container, in a second period, sets the second heater to a temperature T2 at which no film is formed on the substrate and supplies a precursor gas into the process container from the precursor gas supply pipe, in a third period, sets the second heater to a film-forming temperature T3, and in the first to third periods, sets the first heater to a temperature T4 at which no film is formed on a periphery of a gas supply port of the precursor gas supply pipe.

A mechanically robust flexible hybrid electrode comprises a polymeric substrate, one or more monolayers of a two-dimensional (2D) material on the polymeric substrate, and an electrically conductive film on the 2D material. The mechanically robust flexible hybrid electrode may exhibit a bending strain to failure of at least about 12%. A method of making a flexible hybrid electrode may comprise transferring a monolayer comprising a 2D material to a polymeric substrate. After transferring one or more of the monolayers to the polymeric substrate, an electrically conductive film may be formed on the one or more monolayers, thereby forming a mechanically robust flexible hybrid electrode.

Provided is a method for manufacturing a semiconductor device including: patterning a substrate to form a plurality of active patterns including two adjacent active patterns having a first trench therebetween; forming a semiconductor layer on the plurality of active patterns to cover the plurality of active patterns; forming a device isolation layer on the semiconductor layer to cover the semiconductor layer for oxidization and fill the first trench; patterning the device isolation layer and the plurality of active patterns so that a second trench intersecting the first trench is formed and the two active patterns protrudes from the device isolation layer in the second trench; and forming a gate electrode in the second trench. Here, a first thickness of the semiconductor layer covering a top surface of each of the two active patterns is greater than a second thickness of the semiconductor layer covering a bottom of the first trench.

A PET container comprising a wall having an inside surface and an outside surface wherein the inside surface is coated with a silicon oxide barrier coating and having a barrier improvement factor (BIF) for oxygen as a result of the silicon oxide barrier coating, wherein the coated PET container retains at least 17% of BIF after the PET container is exposed to a thermal sterilization process.

Embodiments relate to fabricating a wafer including a thin, high-quality single crystal GaN layer serving as a template for formation of additional GaN material. A bulk ingot of GaN material is subjected to implantation to form a subsurface cleave region. The implanted bulk material is bonded to a substrate having lattice and/or Coefficient of Thermal Expansion (CTE) properties compatible with GaN. Examples of such substrate materials can include but are not limited to AlN and Mullite. The GaN seed layer is transferred by a controlled cleaving process from the implanted bulk material to the substrate surface. The resulting combination of the substrate and the GaN seed layer, can form a template for subsequent growth of overlying high quality GaN. Growth of high-quality GaN can take place utilizing techniques such as Liquid Phase Epitaxy (LPE) or gas phase epitaxy, e.g., Metallo-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE).

A lubricant free firing weapon is provided having amorphous, solid, diamond-like carbon coating (DLC) containing sp3, sp2 carbons and hydrogen bonded to the metallic operating parts. Such firing weapons may further include physical modifications to the bolt carrier rails to enhance the expulsion of sand/dust on the bolt carrier under extreme environments. Also provided herein are plasma enhanced chemical vapor deposition processes for producing such lubricant free weapons having coat thicknesses of 1 m-25 m which allows for reliable operation under all environmental conditions including extreme environments such as hot/cold and sand/dust without the need for lubrication.