A coating system for coating, with a surface coating process, an interior surface of a housing defining an interior volume, having: a first closure and a second closure to sealingly engage with the housing; one or more first flow lines and second flow lines fluidically coupled to the first and second closure, respectively; a pressurized cell comprising a pressurized gas comprising at least one reactant and at a pressure of greater than a pressure within the housing, wherein the pressurized cell is fluidically coupled to a pressurized cell line comprising one of the first flow lines or second flow lines; and a controller in electronic communication with the pressurized cell and configured to control injection of a pulse of the pressurized gas into a flow of inert gas in the pressurized cell line, whereby the pulse is introduced into the interior volume, coating the interior surface with a coating layer.

In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

A vacuum deposition system includes a vacuum deposition chamber having multiple regions defined therein; a carousel disposed in the vacuum deposition chamber, the carousel configured to hold multiple substrates, the carousel rotatable around a central spindle; a deposition source positioned to deposit material onto a substrate located in a deposition region of the vacuum deposition chamber; and multiple heating elements disposed in the vacuum deposition chamber in a fixed position relative to the central spindle, each heating element being controllable separately from each other heating element, wherein each heating element is positioned to apply heat to a corresponding region of the vacuum deposition chamber.

A heating apparatus including a side wall heat insulator configured to provide an inner space for receiving a reaction tube, an upper wall heat insulator covering a top portion of the side wall heat insulator, a heat generation part in an inner surface of the side wall heat insulator, and a heat compensating part on a lower surface of the upper wall heat insulator, the heat compensating part including a reflection surface in a first region on the lower surface of the upper wall heat insulator, the first region having a first emissivity less than an emissivity of the upper wall heat insulator may be provided.

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

The present disclosure provides substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam irradiating plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a laser beam to a lower surface of the flat substrate through the beam irradiating plate; and a gas circulation cooling module for spraying a cooling gas to an upper surface of the infrared transmitting plate, thereby cooling the infrared transmitting plate.

Methods of forming carbon nanotubes and structures and devices including carbon nanotubes are disclosed. Methods of forming the carbon nanotubes include patterning a surface of a substrate with polymeric material, removing portions of the polymeric material to form exposed substrate surface sections, and forming the carbon nanotubes on the exposed substrate sections.

Provided is a method forming a catalytic nanocoating on a surface of a metal plate, wherein the method comprises pretreating the surface of the metal plate by means of heat treatment at 500-800 C., forming a metaloxide support by washcoating on the surface of the metal plate, and coating the surface of the metal plate by depositing catalytically active metals and/or metaloxides on the metaloxide support by means of an atomic layer deposition (ALD) method in order to form a thin and conformal catalyst layer on the metal plate. Further, the invention relates to a catalyst and a use.

A continuous method for preparing a metal substrate having a graphene-comprising coating, the method including providing a metal substrate, continuously advancing the metal substrate into and through a processing chamber, the processing chamber having one or more heating elements, providing electromagnetic radiation to the metal substrate via the one or more heating elements to heat the metal substrate, wherein heating the metal substrates forms a molten metal layer on a top surface of the metal substrate, contacting the molten metal layer with a carbon source gas to form a graphene-comprising coating substantially covering the molten metal layer of the top surface of the metal substrate, solidifying the molten metal layer, and advancing the metal substrate having the graphene-comprising coating out of the processing chamber.

Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500 C. to 1200 C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX.sub.2, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).