Provided are a layer structure including a carbon-based material, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure may include a lower layer, an ion implantation layer in the lower layer, and a carbon-based material layer on the ion implantation layer, wherein the ion implantation layer includes carbon. The ion implantation layer may include a trench, and the carbon-based material layer may be provided in the trench. The carbon-based material layer may be formed to coat an inner surface of the trench. The carbon-based material layer may fill at least a portion of the trench. The ion implantation concentration of the ion implantation layer may be uniform as a whole. The ion implantation layer may have an ion implantation concentration gradient in a given direction.

A method for coating a metal workpiece with graphene includes exposing the metal workpiece to a carbon-containing precursor gas and a hydrogen gas in a processing chamber in a first phase, and to the carbon-containing precursor gas, the hydrogen gas and a first carrier gas in the processing chamber in a second phase after the first phase. A first flow rate of the carbon-containing precursor gas into the processing chamber is higher than a second flow rate of the carbon-containing precursor gas into the processing chamber, and a first flow rate of the hydrogen gas into the processing chamber is higher than a second flow rate of the hydrogen gas into the processing chamber. A first total gas pressure in the processing chamber in the first phase is lower than a second total gas pressure in the processing chamber in the second phase.

A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

Embodiments of the present disclosure generally relate to protective coatings on substrates and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on a substrate includes depositing a chromium oxide layer containing amorphous chromium oxide on a surface of the substrate during a first vapor deposition process and heating the substrate containing the chromium oxide layer comprising the amorphous chromium oxide to convert at least a portion of the amorphous chromium oxide to crystalline chromium oxide during a first annealing process. The method also includes depositing an aluminum oxide layer containing amorphous aluminum oxide on the chromium oxide layer during a second vapor deposition process and heating the substrate containing the aluminum oxide layer disposed on the chromium oxide layer to convert at least a portion of the amorphous aluminum oxide to crystalline aluminum oxide during a second annealing process.

There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.

In some implementations, a control device may determine a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool and/or a gapping measurement in a second dimension between the wafer and the pre-heat ring, using one or more images captured in situ during a process by at least one optical sensor. Accordingly, the control device may generate a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement and/or the gapping measurement. The control device may provide the command to at least one motor to move the susceptor.

Provided is a method forming a catalytic nanocoating on a surface of a metal plate, wherein the method comprises pretreating the surface of the metal plate by means of heat treatment at 500-800° C., forming a metaloxide support by washcoating on the surface of the metal plate, and coating the surface of the metal plate by depositing catalytically active metals and/or metaloxides on the metaloxide support by means of an atomic layer deposition (ALD) method in order to form a thin and conformal catalyst layer on the metal plate. Further, the invention relates to a catalyst and a use.

The present disclosure is drawn to a coating device and a method of manufacturing a coated media substrate. The coating device can comprise a pre-moisturizer and pre-heater unit to apply heat and moisture to a media substrate; a coating composition applicator to apply a wet coating composition to the media substrate after it has been heated and moisturized by the pre-moisturizer and pre-heater unit; and a dryer to receive the media substrate having the wet coating composition applied thereto and to remove moisture, thereby generating a coated media substrate.

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure.

Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.