A semiconductor processing system includes a front-end module connected to a load lock, a process module coupled to the front-end module by the load lock, a purge/vent fluid inlet conduit connected to the load lock, a heater element coupled to the load lock by the purge/vent fluid inlet conduit, and a controller. The controller is operably connected to the heater element and responsive to instructions recorded on a memory to transfer a substrate carrying substrate moisture from the front-end module into the load lock, heat a purge/vent fluid using the heater element, flow the heated purge/vent fluid into the load lock using the purge/vent fluid inlet conduit, remove the moisture from the load lock using the heated purge/vent fluid, and transfer the substrate from the load lock to the process module for processing using the process module. Moisture control methods and heated purge/vent fluid arrangements are also described.

A method for coating fibres includes coating short fibres having an average length less than or equal to 5 mm by chemical vapour deposition in a fluidised bed, the short fibres treated being made of ceramic material or carbon and being mixed with spacer particles distinct from the short fibres, the spacer particles having an average diameter greater than or equal to 20 μm.

A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

A method of coating metallic powder particles includes disposing an amount of metallic powder particles in a fluidizing reactor and removing moisture adhered to the powder particles within the reactor with a working gas at an elevated temperature for a predetermined time. The method further includes coating the powder particles in the reactor with silicon present within the precursor gas at an elevated temperature for a predetermined time and purging the precursor gas from the reactor using the working gas.

A system and a method for forming a film with an annealing step and a deposition step is disclosed. The system performs an annealing step for inducing self-assembly or alignment within a polymer. The system also performs a selective deposition step in order to enable selective deposition on a polymer.

A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ.Math.cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.

A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerhead positioned in the chamber the elongation in a direction along the tape; flowing gas from first and second elongated gas curtain shower heads on either side of the precursor showerhead; and illuminating the upper surface of the tape with illumination from sources on opposing sides of the reactor, the illumination sources positioned so as to allow illumination to pass under a respective one of the curtain shower heads and under the precursor showerhead to the upper surface of the tape.

The invention provide a manufacturing method for producing conductive adhesive with spherical graphene, and the steps comprise as following: step 1: preparing monomer, initiator, a dispersing agent and solvent to manufacture a monomer compound, and use the monomer compound to produce polymer micro ball; step 2: heating pre-treatment or plasma etching pre-treatment to the said polymer micro ball; step 3: by chemical vapor deposition, the polymer micro ball after pre-treatment from step 2 to grow graphene outside surfaces or inside polymer micro ball, and then obtain the spherical graphene; step 4: producing epoxy gel system made by epoxy, hardener and accelerant with a certain ratio mixing homogeneously; step 5: dispersing the spherical graphene from step 3 into the epoxy gel system to produce pre-material of conductive adhesive of spherical graphene; Step 6: deforming the pre-material of conductive adhesive of spherical graphene, and then obtain conductive adhesive of spherical graphene.

A process for applying a silicon oxide barrier coating to a PET container, wherein the PET container comprises a wall having an inner surface and an outer surface, the process comprising the steps of: (a) heating a PET container such that at least the outer surface is at a temperature of from about 200° F. to about 383° F.; (b) forming a coated PET container by applying at least one silicon oxide barrier layer on at least the inner surface of the PET container while the temperature of at least the outer surface of the PET container is at a temperature of from about 200° F. to about 383° F.; and (c) cooling the coated PET container after step b.