Patent classifications
C23C16/0227
POROUS NANOSTRUCTURED ELECTRODES FOR DETECTION OF NEUROTRANSMITTERS
Embodiments of the invention are directed to a system for detecting neurotransmitters. A non-limiting example of the system includes a porous electrode. A system can also include a pH sensor attached to the porous electrode, wherein the pH sensor includes a sensing electrode and a reference electrode. The system can also include electronic circuitry in communication with the pH sensor.
METHOD OF SELECTIVELY FORMING COBALT METAL LAYER BY USING COBALT COMPOUND, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING COBALT COMPOUND
A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,
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COATED SUBSTRATES AND METHODS FOR THE PREPARATION THEREOF
The present application relates to methods of preparing a coated substrate and coated substrates which can be optionally prepared from such methods. The methods comprise depositing on the substrate a single abrasion resistant layer by magnetron sputtering or depositing on the substrate a dual layer comprising a first abrasion resistant layer deposited by magnetron sputtering and a second abrasion resistant layer deposited by plasma-enhanced chemical vapor deposition.
Plasma purge method
A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing Cl.sub.2 in the process container; and (b) activating and supplying a second process gas containing H.sub.2 and O.sub.2 in the process container.
FORMATION OF PORES IN ATOMICALLY THIN LAYERS
Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
Selective Deposition Of A Heterocyclic Passivation Film On A Metal Surface
Selective deposition methods are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
METHOD OF PROCESSING SUBSTRATE
The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate. An embodiment of a substrate processing method according to the present disclosure comprises the steps of: carrying a substrate into a first chamber; a first pressurizing step increasing the pressure in the first chamber so that the pressure in the first chamber reaches a first high-pressure that is higher than the normal pressure; a first depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a second high-pressure that is lower than the first high-pressure and equal to or higher than the normal pressure; a first pressurizing/depressurizing repeating step performing the first pressurizing step and the first depressurizing step repeatedly at a predetermined number of times; and a second depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a first low-pressure that is lower than the normal pressure.
Electrophysiology Device with Electrodes Having Increased Surface Area
A medical device includes a body and at least one electrode disposed thereon. The electrode includes a metallic substrate, such as a platinum group metal, an alloy of platinum group metals, or gold. The surface of the substrate is modified in a manner that increases its effective surface area without inducing bulk heating. For example, the surface of the substrate can be laser textured and/or coated, such as with titanium nitride or iridium oxide.
SUPER HYDROPHOBIC FILM LAYER, PREPARATION METHOD THEREOF,AND PRODUCT THEREOF
A super-hydrophobic film layer, a preparation method thereof, and a product thereof are provided, the preparation method includes using a siloxane monomer as a reaction material to form a super-hydrophobic film layer on a surface of a substrate by a plasma enhanced chemical vapor deposition.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
There is included (a) forming a first film having a predetermined composition on a first substrate by supplying a first processing gas to the first substrate; and (b) forming a second film having a composition different from the composition of the first film on the first substrate or a second substrate by performing a cycle including a supply of a second processing gas to the first substrate or the second substrate, wherein when performing (b) in a second state in which the second film adheres to an outermost surface of a member in the process container, the cycle is performed a predetermined m times, and wherein when performing (b) in a first state in which the first film adheres to the outermost surface, the cycle is performed m.sup.± times, or the cycle is performed the m times after performing a precoating process of forming the second film.